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LTC4449IDCB Integrated Circuit Chip High Speed Synchronous N-Channel MOSFET Gate Driver

Certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
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LTC4449IDCB Integrated Circuit Chip High Speed Synchronous N-Channel MOSFET Gate Driver

LTC4449IDCB Integrated Circuit Chip High Speed Synchronous N-Channel MOSFET Gate Driver
LTC4449IDCB Integrated Circuit Chip High Speed Synchronous N-Channel MOSFET Gate Driver
LTC4449IDCB Integrated Circuit Chip High Speed Synchronous N-Channel MOSFET Gate Driver LTC4449IDCB Integrated Circuit Chip High Speed Synchronous N-Channel MOSFET Gate Driver

Large Image :  LTC4449IDCB Integrated Circuit Chip High Speed Synchronous N-Channel MOSFET Gate Driver

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: LTC4449IDCB
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: DFN-8
Delivery Time: 5-8 work days
Payment Terms: T/T, L/C, Western Union

LTC4449IDCB Integrated Circuit Chip High Speed Synchronous N-Channel MOSFET Gate Driver

Description
Part Number: LTC4449IDCB Driven Configuration: Half-Bridge
Channel Type: Synchronous Number Of Drivers: 2
Voltage - Supply: 4V ~ 6.5V High Side Voltage - Max (Bootstrap): 42 V

LTC4449IDCB Integrated Circuit Chip High Speed Synchronous N-Channel MOSFET Gate Driver​

 

Product Description Of LTC4449IDCB

LTC4449IDCB is a high frequency gate driver that is designed to drive two N-Channel MOSFETs in a synchronous DC/DC converter. The powerful rail-to-rail driver capability reduces switching losses in MOSFETs with high gate capacitance.

LTC4449IDCB features a separate supply for the input logic to match the signal swing of the controller IC. If the input signal is not being driven, the LTC4449 activates a shutdown mode that turns off both external MOSFETs. The input logic signal is internally level-shifted to the bootstrapped supply, which functions at up to 42V above ground.


Specification Of LTC4449IDCB

Part Number: LTC4449IDCB
MOSFET Gate Drivers
High-Side, Low-Side
SMD/SMT
DFN-8
2 Driver
2 Output
4.5 A
4 V
6.5 V
8 ns
7 ns
- 40 ℃
+ 125 ℃
Input Voltage - Max: 38 V
Operating Supply Current: 730 uA


Features Of LTC4449IDCB

4V to 6.5V VCC Operating Voltage
38V Maximum Input Supply Voltage
Adaptive Shoot-Through Protection
Rail-to-Rail Output Drivers
3.2A Peak Pull-Up Current
4.5A Peak Pull-Down Current
8ns TG Rise Time Driving 3000pF Load
7ns TG Fall Time Driving 3000pF Load
Separate Supply to Match PWM Controller
Drives Dual N-Channel MOSFETs
Undervoltage Lockout
Low Profile (0.75mm) 2mm × 3mm DFN Package


Applications Of LTC4449IDCB

Distributed Power Architectures
High Density Power Modules


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FAQ
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample free?
A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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