Product Details:
|
Part Number: | A2T27S020GNR1 | Vds - Drain-Source Breakdown Voltage:: | 65 V |
---|---|---|---|
Operating Frequency:: | 400 MHz To 2.7 GHz | Gain:: | 21.1 DB |
Output Power:: | 2.5 W | Unit Weight:: | 548 Mg |
A2T27S020GNR1 Integrated Circuit Chip N-Channel Enhancement Mode RF Power LDMOS Transistors
Product Description Of A2T27S020GNR1
A2T27S020GNR1 is 2.5 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 400 to 2700 MHz.
Specifications Of A2T27S020GNR1
|
N-Channel |
|
Si |
|
65 V |
|
400 MHz to 2.7 GHz |
|
21.1 dB |
|
2.5 W |
|
- 40 C |
|
+ 150 C |
Number of Channels: |
1 Channel |
Vgs - Gate-Source Voltage: |
+ 10 V |
Vgs th - Gate-Source Threshold Voltage: |
1.6 V |
Unit Weight: |
548 mg |
Features Of A2T27S020GNR1
Greater negative gate-source voltage range for improved Class C operation
Designed for digital predistortion error correction systems
Universal broadband driver
RoHS compliant
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FAQ
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample free?
A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.
Contact Person: Sales Manager
Tel: 86-13410018555
Fax: 86-0755-83957753