MT61K512M32KPA-14C:B Memory IC Chip GDDR6 SGRAM Memory 16Gbit Dynamic Random-Access Memory

MT61K512M32KPA-14C:B Memory IC Chip GDDR6 SGRAM Memory 16Gbit Dynamic Random-Access Memory

Product Description Of MT61K512M32KPA-14C:B

MT61K512M32KPA-14C:B GDDR6 SGRAM is a high-speed dynamic random-access memory designed for applications requiring high bandwidth. It is internally configured as 16‐bank memory and contains 17,179,869,184 bits.

MT61K512M32KPA-14C:B——The GDDR6 SGRAM’s high-speed interface is optimized for point-to-point connections to a host controller. On-die termination (ODT) is provided for all high-speed interface signals to eliminate the need for termination resistors in the system.

Specification Of MT61K512M32KPA-14C:B

Features Of MT61K512M32KPA-14C:B

• VDD = VDDQ = 1.35V ±3% and 1.25V ±3%
• VPP = 1.8V –3%/+6%
• Data rate: 14 Gb/s, 16 Gb/s
• 2 separate independent channels (x16)
• x16/x8 and 2-channel/pseudo channel (PC) mode configurations set at reset
• Single ended interfaces per channel for command/address (CA) and data
• Differential clock input CK_t/CK_c for CA per 2 channels
• Two differential clock inputs WCK_t/WCK_c per channel for data (DQ, DBI_n, EDC)
• Programmable READ latency
• Programmable WRITE latency
• Read/write data transmission integrity secured by cyclic redundancy check
• Programmable CRC READ latency
• Programmable CRC WRITE latency
• Programmable EDC hold pattern for CDR
• RDQS mode on EDC pins
• Low power modes
• On‐chip temperature sensor with read‐out
• Auto precharge option for each burst access
• Auto refresh mode (32ms, 16k cycles) with per-bank and per-2-bank refresh options
• 180-ball BGA package
• Lead-free (RoHS-compliant) and halogen-free packaging
• TC = 0°C to +95°C

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