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STW58N60DM2AG Integrated Circuit Chip Automotive N-channel 600V 50A Power MOSFET Transistors

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STW58N60DM2AG Integrated Circuit Chip Automotive N-channel 600V 50A Power MOSFET Transistors

STW58N60DM2AG Integrated Circuit Chip Automotive N-channel 600V 50A Power MOSFET Transistors
STW58N60DM2AG Integrated Circuit Chip Automotive N-channel 600V 50A Power MOSFET Transistors
STW58N60DM2AG Integrated Circuit Chip Automotive N-channel 600V 50A Power MOSFET Transistors STW58N60DM2AG Integrated Circuit Chip Automotive N-channel 600V 50A Power MOSFET Transistors

Large Image :  STW58N60DM2AG Integrated Circuit Chip Automotive N-channel 600V 50A Power MOSFET Transistors

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: STW58N60DM2AG
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: TO-247-3
Delivery Time: 5-8 work days
Payment Terms: T/T, L/C, Western Union
Contact Now

STW58N60DM2AG Integrated Circuit Chip Automotive N-channel 600V 50A Power MOSFET Transistors

Description
Part Number: STW58N60DM2AG Vds - Drain-Source Breakdown Voltage:: 600 V
Id - Continuous Drain Current:: 50 A Rds On - Drain-Source Resistance:: 60 MOhms
Vgs - Gate-Source Voltage:: - 25 V, + 25 V Vgs Th - Gate-Source Threshold Voltage:: 4 V

STW58N60DM2AG Integrated Circuit Chip Automotive N-channel 600V 50A Power MOSFET Transistors

 

Product Description Of STW58N60DM2AG
STW58N60DM2AG high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

 

Specifications Of STW58N60DM2AG

Si

Through Hole

TO-247-3

N-Channel

1 Channel

600 V

50 A

60 mOhms

- 25 V, + 25 V

4 V

90 nC

- 55 C

+ 150 C

360 W

Enhancement

Configuration:

Single

Fall Time:

12 ns

Height:

5.15 mm

Length:

20.15 mm

Rise Time:

60 ns

Typical Turn-Off Delay Time:

130 ns

Typical Turn-On Delay Time:

24 ns

Width:

15.75 mm

Unit Weight:

6 g

 

Features Of STW58N60DM2AG
Designed for automotive applications and AEC-Q101 qualified
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected

 

Applications Of STW58N60DM2AG
Switching applications

 

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FAQ
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample free?
A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.

Tag:

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TUSB1002ARGER Dual Channel Linear,

Integrated Chips QFN24

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

Send your inquiry directly to us (0 / 3000)

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