STGW80H65DFB Integrated Circuit Chip Trench Gate Field-Stop 650V 80A High Speed HB Series IGBT Transistors

STGW80H65DFB Integrated Circuit Chip Trench Gate Field-Stop 650V 80A High Speed HB Series IGBT Transistors

Product Description Of STGW80H65DFB
STGW80H65DFB devices is IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Specifications Of STGW80H65DFB

Features Of STGW80H65DFB
Maximum junction temperature: TJ = 175 °C
High speed switching series
Minimized tail current
Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A
Tight parameter distribution
Safe paralleling
Positive VCE(sat) temperature coefficient
Low thermal resistance
Very fast soft recovery antiparallel diode

Applications Of STGW80H65DFB
Photovoltaic inverters
High frequency converters

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FAQ
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Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.