PAFSC5G35E37R9 Integrated Circuit Chip Power Amplifier Module For LTE And 5G

PAFSC5G35E37R9 Integrated Circuit Chip Power Amplifier Module For LTE And 5G

Product Description Of PAFSC5G35E37R9
The PAFSC5G35E37R9 is a high-performance power amplifier module designed for 5G and LTE applications and represents the latest state of the art in current RF front-end technologies. The module is manufactured using advanced LDMOS (laterally diffused metal oxide semiconductor) process technology and belongs to Class AB and Class C operating modes, providing excellent power added efficiency (PAE) and linearity performance.

From the perspective of core parameters, the operating frequency range of PAFSC5G35E37R9 covers 3400MHz to 3600MHz. This frequency band corresponds to the n78 frequency band (3.3-3.8 GHz) of 5G NR and some LTE frequency bands, making it an ideal choice for 5G small base stations and relay equipment. Under typical operating conditions, this module can provide a high efficiency performance of 45.8%, which is significantly better than the average level of about 30% for similar products on the market. Its power gain reaches 34.5 dB at the 2350MHz test frequency, showing excellent signal amplification capabilities.

The power handling of the PAFSC5G35E37R9 is equally impressive. The module has a typical P3dB (1dB compression point output power) of 44.8 dBm (approximately 30.2 W), which still maintains good linearity at an average power output of 5W3. This feature enables it to handle the peak-to-average ratio (PAR) characteristics of LTE and 5G signals, meeting the stringent requirements of modern communication systems for high dynamic range signal amplification. The standard operating voltage of the module is 28V, which is a medium voltage design and strikes a good balance between efficiency and complexity.

In terms of system integration, PAFSC5G35E37R9 adopts input and output impedance matching design, which simplifies the design complexity of the RF front end3. This integrated design reduces the need for external matching network, which not only reduces the PCB area, but also improves the stability and consistency of the system. The module is optimized and tested for LTE signals, ensuring excellent ACLR (adjacent channel leakage ratio) and EVM (error vector amplitude) performance under various modulation formats (such as QPSK, 16QAM, 64QAM).

Compared with other 5G power amplifiers on the market, such as Hanwei Optoelectronics' HWA1330 (n78 band, PAE > 30%) 8 or ANADIGICS 'ALT6704 (1710-1785MHz, 40% higher efficiency), PAFSC5G35E37R9 shows a more balanced performance in the 3.4-3.6 GHz frequency band, especially in the industry-leading position in the comprehensive indicators of efficiency and linearity. This performance advantage makes it the preferred solution for 5G small base stations, relay equipment, and high-density network deployment scenarios.

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FAQ
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample free?
A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.