TC58NYG2S0HBAI4 Memory IC Chip 4Gbit NAND Flash Memory IC TFBGA63

TC58NYG2S0HBAI4 Memory IC Chip 4Gbit NAND Flash Memory IC TFBGA63​

Product Overviews Of TC58NYG2S0HBAI4

TC58NYG2S0HBAI4 is a single 1.8V 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes  64 pages  2048 blocks.

TC58NYG2S0HBAI4 has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes + 16 Kbytes: 4352 bytes x 64 pages).

Specification Of TC58NYG2S0HBAI4

Features Of TC58NYG2S0HBAI4

Organization x8
Memory cell array: 4352 x 128K x 8
Register: 4352 x 8
Page size: 4352bytes
Block size: (256K x 16K) bytes
Power supply - VCC: 1.7V to 1.95V
8 bit ECC for each 512Byte is required.

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A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.