STGB30M65DF2 Integrated Circuit Chip 650V 30A Trench Gate Field Stop IGBT Transistors

STGB30M65DF2 Integrated Circuit Chip 650V 30A Trench Gate Field Stop IGBT Transistors​

Product Description Of STGB30M65DF2

STGB30M65DF2 is an IGBT developed using an advanced proprietary trench gate field‑stop structure. STGB30M65DF2 is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Specification Of STGB30M65DF2

Features Of STGB30M65DF2

Maximum junction temperature: TJ = 175 °C
6 μs of minimum short-circuit withstand time
VCE(sat) = 1.55 V (typ.) at IC = 30 A
Tight parameter distribution
Safer paralleling
Positive VCE(sat) temperature coefficient
Low thermal resistance
Soft and very fast-recovery antiparallel diode

Applications Of STGB30M65DF2

Motor control
UPS
PFC
General purpose inverter

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