STP24N60M2 600V 18A 168 mOhms Power MOSFET Transistor with MDmesh M2 Technology in TO-220-3 Package

Name: STP24N60M2 600V 18A 168 mOhms Power MOSFET Transistor with MDmesh M2 Technology in TO-220-3 Package
Brand: ShenZhen Mingjiada Electronics Co.,Ltd.
SKU: STP24N60M2
Availability: InStock

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STP24N60M2 600V 18A 168 mOhms Power MOSFET Transistor with MDmesh M2 Technology in TO-220-3 Package

Large Image : STP24N60M2 600V 18A 168 mOhms Power MOSFET Transistor with MDmesh M2 Technology in TO-220-3 Package

Product Details:

Place of Origin:	CN
Brand Name:	Original Factory
Certification:	Lead free / RoHS Compliant
Model Number:	STP24N60M2

Payment & Shipping Terms:

Minimum Order Quantity:	10
Price:	Contact for Sample
Packaging Details:	TO-220-3
Delivery Time:	5-8 work days
Payment Terms:	T/T,L/C,Western Union

Contact Now

STP24N60M2 600V 18A 168 mOhms Power MOSFET Transistor with MDmesh M2 Technology in TO-220-3 Package

Description

Part Number:	STP24N60M2	Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	18 A	Rds On - Drain-Source Resistance:	168 MOhms
Qg - Gate Charge:	29 NC	Pd - Power Dissipation:	150 W
Highlight:	STP24N60M2 , STP24N60M2 Integrated Circuit Chip , 600V MDmesh M2 Power MOSFET Transistors

STP24N60M2 Integrated Circuit Chip 600V MDmesh M2 Power MOSFET Transistors TO-220-3

Product Description

STP24N60M2 is N-channel Power MOSFET Transistors developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.

Specifications

Series	MDmesh™ II Plus
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	1060 pF @ 100 V
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3

Key Features

Extremely low gate charge
Excellent output capacitance (Coss) profile
100% avalanche tested
Zener-protected

Applications

Switching Applications

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Frequently Asked Questions

Q. Are your products original?

A: Yes, all products are original, new original import is our purpose.

Q: Which Certificates do you have?

A: We are ISO 9001:2015 Certified Company and member of ERAI.

Q: Can you support small quantity order or sample? Is the sample free?

A: Yes, we support sample order and small order. Sample cost is different according to your order or project.

Q: How to ship my order? Is it safe?

A: We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.

Q: What about the lead time?

A: We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Tag:

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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STP24N60M2 600V 18A 168 mOhms Power MOSFET Transistor with MDmesh M2 Technology in TO-220-3 Package

STP24N60M2 600V 18A 168 mOhms Power MOSFET Transistor with MDmesh M2 Technology in TO-220-3 Package

STP24N60M2 600V 18A 168 mOhms Power MOSFET Transistor with MDmesh M2 Technology in TO-220-3 Package

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