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IPW60R099P6 Integrated Circuit Chip 600V CoolMOS P6 N-Channel Power MOSFET Transistors

Certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
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IPW60R099P6 Integrated Circuit Chip 600V CoolMOS P6 N-Channel Power MOSFET Transistors

IPW60R099P6 Integrated Circuit Chip 600V CoolMOS P6 N-Channel Power MOSFET Transistors
IPW60R099P6 Integrated Circuit Chip 600V CoolMOS P6 N-Channel Power MOSFET Transistors

Large Image :  IPW60R099P6 Integrated Circuit Chip 600V CoolMOS P6 N-Channel Power MOSFET Transistors

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: IPW60R099P6
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: PG-TO247-3
Delivery Time: 5-8 work days
Payment Terms: T/T, L/C, Western Union

IPW60R099P6 Integrated Circuit Chip 600V CoolMOS P6 N-Channel Power MOSFET Transistors

Description
Part Number: IPW60R099P6 Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 37.9 A Rds On - Drain-Source Resistance: 99 MOhms
Qg - Gate Charge: 70 NC Pd - Power Dissipation: 278 W
Highlight:

IPW60R099P6

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IPW60R099P6 Integrated Circuit Chip

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P6 N-Channel Power MOSFET Transistors

IPW60R099P6 Integrated Circuit Chip 600V CoolMOS P6 N-Channel Power MOSFET Transistors​

 

Product Description Of IPW60R099P6

IPW60R099P6 is 600V, CoolMOS™ P6 Power Transistor. The CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.


Specification Of IPW60R099P6

Series
CoolMOS™ P6
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
37.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
99mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1.21mA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3330 pF @ 100 V
Power Dissipation (Max)
278W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3
Package / Case
TO-247-3
 


Features Of IPW60R099P6

Reduced gate charge (Q g)
Higher V th
Good body diode ruggedness
Optimized integrated R g
Improved dv/dt from 50V/ns
Increased MOSFET dv/dt ruggedness
Extremely low losses due to very low FOM Rdson*Qg and Eoss
Very high commutation ruggedness
Easy to use/drive
Pb-free plating, Halogen free mold compound


Applications Of IPW60R099P6
Complete system solutions for smart TVs
Telecommunications infrastructure
PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD and PDPTV, Lighting, Server, Telecom and UPS.

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FAQ
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample free?
A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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