IRLR3636TRPBF 60V 99A Power MOSFET Transistor HEXFET N-Channel with 6.8 mOhms RDS(ON) in DPAK-3 Package

Name: IRLR3636TRPBF 60V 99A Power MOSFET Transistor HEXFET N-Channel with 6.8 mOhms RDS(ON) in DPAK-3 Package
Brand: ShenZhen Mingjiada Electronics Co.,Ltd.
SKU: IRLR3636TRPBF
Availability: InStock

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IRLR3636TRPBF 60V 99A Power MOSFET Transistor HEXFET N-Channel with 6.8 mOhms RDS(ON) in DPAK-3 Package

Large Image : IRLR3636TRPBF 60V 99A Power MOSFET Transistor HEXFET N-Channel with 6.8 mOhms RDS(ON) in DPAK-3 Package

Product Details:

Place of Origin:	CN
Brand Name:	Original Factory
Certification:	Lead free / RoHS Compliant
Model Number:	IRLR3636TRPBF

Payment & Shipping Terms:

Minimum Order Quantity:	10
Price:	Contact for Sample
Packaging Details:	TO-252-3
Delivery Time:	5-8 work days
Payment Terms:	T/T,L/C,Western Union

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IRLR3636TRPBF 60V 99A Power MOSFET Transistor HEXFET N-Channel with 6.8 mOhms RDS(ON) in DPAK-3 Package

Description

Part Number:	IRLR3636TRPBF	Package / Case:	DPAK-3 (TO-252-3)
Vds - Drain-Source Breakdown Voltage:	60 V	Id - Continuous Drain Current:	99 A
Rds On - Drain-Source Resistance:	6.8 MOhms	Qg - Gate Charge:	49 NC
Highlight:	60V Power MOSFET Transistor , 99A HEXFET Transistor , 6.8 mOhms N-Channel MOSFET

IRLR3636TRPBF Integrated Circuit Chip 60V HEXFET Single N-Channel Power MOSFET Transistors

IRLR3636TRPBF is a 60V, HEXFET Single N-Channel Power MOSFET Transistor in a D-Pak package. Part of the StrongIRFET™ power MOSFET family, it is optimized for low RDS(on) and high current capability.

This component is ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Specifications

Series	HEXFET®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	49 nC @ 4.5 V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	3779 pF @ 50 V
Power Dissipation (Max)	143W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252AA (DPAK)
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63

Key Features

Optimized for Logic Level Drive
Very Low RDS(ON) at 4.5V VGS
Superior R*Q at 4.5V VGS
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free

Typical Applications

DC Motor Drive
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits

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Frequently Asked Questions

Q. Are your products original?

A: Yes, all products are original, new original import is our purpose.

Q: Which Certificates do you have?

A: We are ISO 9001:2015 Certified Company and member of ERAI.

Q: Can you support small quantity order or sample? Is the sample free?

A: Yes, we support sample order and small order. Sample cost is different according to your order or project.

Q: How to ship my order? Is it safe?

A: We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.

Q: What about the lead time?

A: We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Tag:

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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IRLR3636TRPBF 60V 99A Power MOSFET Transistor HEXFET N-Channel with 6.8 mOhms RDS(ON) in DPAK-3 Package

IRLR3636TRPBF 60V 99A Power MOSFET Transistor HEXFET N-Channel with 6.8 mOhms RDS(ON) in DPAK-3 Package

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