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NGTB40N120FL2WG IGBT Transistor 1200V 80A 535W with Trench Field Stop Technology for Solar Inverters and UPS

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NGTB40N120FL2WG IGBT Transistor 1200V 80A 535W with Trench Field Stop Technology for Solar Inverters and UPS

NGTB40N120FL2WG IGBT Transistor 1200V 80A 535W with Trench Field Stop Technology for Solar Inverters and UPS
NGTB40N120FL2WG IGBT Transistor 1200V 80A 535W with Trench Field Stop Technology for Solar Inverters and UPS

Large Image :  NGTB40N120FL2WG IGBT Transistor 1200V 80A 535W with Trench Field Stop Technology for Solar Inverters and UPS

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: NGTB40N120FL2WG
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: TO-247
Delivery Time: 3-5 work days
Payment Terms: T/T
Supply Ability: 10000 Pieces per Day
Contact Now

NGTB40N120FL2WG IGBT Transistor 1200V 80A 535W with Trench Field Stop Technology for Solar Inverters and UPS

Description
Part Number: NGTB40N120FL2WG Collector- Emitter Voltage VCEO Max:: 1.2 KV
Collector-Emitter Saturation Voltage:: 2 V Maximum Gate Emitter Voltage:: - 20 V, 20 V
Continuous Collector Current At 25 C:: 80 A Pd - Power Dissipation:: 535 W
Highlight:

1200V IGBT Transistor

,

80A Integrated Circuit Chip

,

535W Insulated Gate Bipolar Transistor

NGTB40N120FL2WG Integrated Circuit Chip 1200V 80A 535W IGBT Trench Field Stop Transistors
Product Description

The NGTB40N120FL2WG Insulated Gate Bipolar Transistor (IGBT) features a robust and cost-effective Field Stop II Trench construction, delivering superior performance in demanding switching applications. This device combines low on-state voltage with minimal switching loss, making it ideal for UPS and solar applications. Includes a soft and fast co-packaged free-wheeling diode with low forward voltage.

Specifications
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 200 A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A
Power - Max 535 W
Switching Energy 3.4mJ (on), 1.1mJ (off)
Input Type Standard
Gate Charge 313 nC
Td (on/off) @ 25°C 116ns/286ns
Test Condition 600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr) 240 ns
Operating Temperature -55°C ~ 175°C (TJ)
Key Features
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 10 s Short Circuit Capability
  • Pb-Free Device
Applications
  • Solar Inverter
  • Uninterruptible Power Supplies (UPS)
  • Welding Equipment
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5L35023B-000NLGI8 VFQFPN-24
XC7A200T-1FF1156I FCBGA-1156
XC7A15T-3FTG256E FBGA-256
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Frequently Asked Questions
Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample? Is the sample free?
A: Yes, we support sample orders and small orders. Sample cost varies according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express services such as DHL, FedEx, UPS, TNT, EMS. We can also use your suggested forwarder. Products are securely packaged, and we guarantee product safety.
Q: What about the lead time?
A: Stock parts ship within 5 working days. For non-stock items, we'll confirm lead time based on your order quantity.

Tag:

Integrated Circuit Chip 24-PQFN,

TUSB1002ARGER Dual Channel Linear,

Integrated Chips QFN24

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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