IPP032N06N3G OptiMOS™ 3 Power MOSFET N-Channel 60V 120A 2.6 mOhms for High Efficiency Switching

Name: IPP032N06N3G OptiMOS™ 3 Power MOSFET N-Channel 60V 120A 2.6 mOhms for High Efficiency Switching
Brand: ShenZhen Mingjiada Electronics Co.,Ltd.
SKU: IPP032N06N3G
Availability: InStock

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IPP032N06N3G OptiMOS™ 3 Power MOSFET N-Channel 60V 120A 2.6 mOhms for High Efficiency Switching

Large Image : IPP032N06N3G OptiMOS™ 3 Power MOSFET N-Channel 60V 120A 2.6 mOhms for High Efficiency Switching

Product Details:

Place of Origin:	CN
Brand Name:	Original Factory
Certification:	Lead free / RoHS Compliant
Model Number:	IPP032N06N3G

Payment & Shipping Terms:

Minimum Order Quantity:	10
Price:	Contact for Sample
Packaging Details:	TO-220-3
Delivery Time:	3-5 work days
Payment Terms:	T/T
Supply Ability:	10000 Pieces per Day

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IPP032N06N3G OptiMOS™ 3 Power MOSFET N-Channel 60V 120A 2.6 mOhms for High Efficiency Switching

Description

Part Number:	IPP032N06N3G	Vds - Drain-Source Breakdown Voltage::	60 V
Id - Continuous Drain Current::	120 A	Rds On - Drain-Source Resistance::	2.6 MOhms
Vgs - Gate-Source Voltage::	- 20 V, 20 V	Vgs Th - Gate-Source Threshold Voltage::	3 V
Highlight:	60V Power MOSFET , 120A N-Channel MOSFET , 2.6 mOhms OptiMOS™ 3

IPP032N06N3G Integrated Circuit Chip OptiMOS™ 3 60V 120A N-Channel Power MOSFET Transistors

Product Overview

IPP032N06N3G OptiMOS™ 60V is an advanced power MOSFET transistor designed for high-efficiency applications. This N-Channel device is ideal for synchronous rectification in switched mode power supplies (SMPS) found in servers, desktops, and tablet chargers. Additionally, it serves various industrial applications including motor control, solar micro inverters, and fast switching DC-DC converters.

Technical Specifications

Parameter	Value
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 118µA
Gate Charge (Qg) (Max) @ Vgs	165 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	13000 pF @ 30 V
Power Dissipation (Max)	188W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)

Key Features

Ideal for high frequency switching and synchronous rectification
Optimized technology for DC/DC converters
Excellent gate charge x RDs(on) product (FOM)
Very low on-resistance Rps(on)
N-channel, normal level
100% avalanche tested
Pb-free plating; RoHS compliant
Qualified according to JEDEC for target applications
Halogen-free according to IEC61249-2-21

Performance Benefits

Highest system efficiency
Less paralleling required
Increased power density
System cost reduction
Very low voltage overshoot

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Frequently Asked Questions

Are your products original?

Yes, all products are original, new original import is our purpose.

Which Certificates do you have?

We are ISO 9001:2015 Certified Company and member of ERAI.

Can you support small quantity order or sample? Is the sample free?

Yes, we support sample orders and small orders. Sample cost varies according to your order or project requirements.

How to ship my order? Is it safe?

We use express carriers such as DHL, FedEx, UPS, TNT, and EMS. We can also use your suggested forwarder. Products are carefully packaged to ensure safety, and we are responsible for any product damage to your order.

What about the lead time?

We can ship stock parts within 5 working days. For items not in stock, we will confirm lead time based on your order quantity.

Tag:

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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IPP032N06N3G OptiMOS™ 3 Power MOSFET N-Channel 60V 120A 2.6 mOhms for High Efficiency Switching

IPP032N06N3G OptiMOS™ 3 Power MOSFET N-Channel 60V 120A 2.6 mOhms for High Efficiency Switching

IPP032N06N3G OptiMOS™ 3 Power MOSFET N-Channel 60V 120A 2.6 mOhms for High Efficiency Switching

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