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IRFP4368PBF Power MOSFET 75V 195A 1.85 mOhms N-Channel StrongIRFET Transistor in TO-247 Package

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china ShenZhen Mingjiada Electronics Co.,Ltd. certification
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IRFP4368PBF Power MOSFET 75V 195A 1.85 mOhms N-Channel StrongIRFET Transistor in TO-247 Package

IRFP4368PBF Power MOSFET 75V 195A 1.85 mOhms N-Channel StrongIRFET Transistor in TO-247 Package
IRFP4368PBF Power MOSFET 75V 195A 1.85 mOhms N-Channel StrongIRFET Transistor in TO-247 Package

Large Image :  IRFP4368PBF Power MOSFET 75V 195A 1.85 mOhms N-Channel StrongIRFET Transistor in TO-247 Package

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: IRFP4368PBF
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: TO-247-3
Delivery Time: 5-8 work days
Payment Terms: T/T,L/C,Western Union

IRFP4368PBF Power MOSFET 75V 195A 1.85 mOhms N-Channel StrongIRFET Transistor in TO-247 Package

Description
Part Number: IRFP4368PBF Vds - Drain-Source Breakdown Voltage:: 75 V
Id - Continuous Drain Current:: 195 A Rds On - Drain-Source Resistance:: 1.85 MOhms
Vgs - Gate-Source Voltage:: - 20 V, 20 V Vgs Th - Gate-Source Threshold Voltage:: 4 V
Highlight:

75V Power MOSFET

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195A MOSFET Transistor

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1.85 mOhms StrongIRFET

IRFP4368PBF Integrated Circuit Chip
75V Single N-Channel StrongIRFET™ Power MOSFET Transistors in TO-247 Package
Product Overview
The IRFP4368PBF StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. These devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Technical Specifications
Parameter Value
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.85mOhm @ 195A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 570 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 19230 pF @ 50 V
Power Dissipation (Max) 520W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Key Features
  • Optimized for broadest availability
  • Product qualification according to JEDEC
  • Industry standard through-hole power
  • High-current rating
Performance Benefits
  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
  • Fully Characterized Capacitance and Avalanche SOA
  • Enhanced body diode dV/dt and dI/dt Capability
  • Lead-Free construction
Applications
  • High Efficiency Synchronous Rectification in SMPS
  • Uninterruptible Power Supply
  • High Speed Power Switching
  • Hard Switched and High Frequency Circuits
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Frequently Asked Questions
Are your products original?
Yes, all products are original, new original import is our purpose.
Which Certificates do you have?
We are ISO 9001:2015 Certified Company and member of ERAI.
Can you support small quantity order or sample? Is the sample free?
Yes, we support sample orders and small orders. Sample cost varies according to your order or project requirements.
How to ship my order? Is it safe?
We use express carriers such as DHL, FedEx, UPS, TNT, and EMS. We can also use your suggested forwarder. Products will be securely packaged, and we are responsible for any damage to your order.
What about the lead time?
We can ship stock parts within 5 working days. For items not in stock, we will confirm lead time based on your order quantity.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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