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H9HCNNN8KUMLHR Memory IC Chip 2-Channel High-Speed 3.733GHz 8Gbit SDRAM LPDDR4 Memory

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china ShenZhen Mingjiada Electronics Co.,Ltd. certification
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H9HCNNN8KUMLHR Memory IC Chip 2-Channel High-Speed 3.733GHz 8Gbit SDRAM LPDDR4 Memory

H9HCNNN8KUMLHR Memory IC Chip 2-Channel High-Speed 3.733GHz 8Gbit SDRAM LPDDR4 Memory
H9HCNNN8KUMLHR Memory IC Chip 2-Channel High-Speed 3.733GHz 8Gbit SDRAM LPDDR4 Memory H9HCNNN8KUMLHR Memory IC Chip 2-Channel High-Speed 3.733GHz 8Gbit SDRAM LPDDR4 Memory

Large Image :  H9HCNNN8KUMLHR Memory IC Chip 2-Channel High-Speed 3.733GHz 8Gbit SDRAM LPDDR4 Memory

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: H9HCNNN8KUMLHR
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: 200-FBGA
Delivery Time: 5-8 work days
Payment Terms: T/T,L/C,Western Union

H9HCNNN8KUMLHR Memory IC Chip 2-Channel High-Speed 3.733GHz 8Gbit SDRAM LPDDR4 Memory

Description
Part Number: H9HCNNN8KUMLHR Capacity: 8Gbit
Type: Memory IC Chip Package: 200-FBGA
Highlight:

2-Channel Memory IC Chip

,

High-Speed 3.733GHz LPDDR4 Memory

,

8Gbit Capacity SDRAM LPDDR4 Memory

H9HCNNN8KUMLHR Memory IC Chip 2-Channel High-Speed 8Gbit 3.733GHz SDRAM LPDDR4 Memory
The H9HCNNN8KUMLHR is a high-performance LPDDR4 SDRAM memory device featuring a 2-channel architecture with 8 banks per channel, designed for high-speed data processing applications.
Product Overview
H9HCNNN8KUMLHR is a high-speed synchronous DRAM LPDDR4 memory device internally configured as a 2-channel memory with 8-bank memory per each channel.
Key Features
  • VDD1 = 1.8V (1.7V to 1.95V)
  • VDD2, VDDCA and VDDQ = 1.1V (1.06 to 1.17)
  • VSSQ terminated DQ signals (DQ, DQS_t, DQS_C, DMI)
  • Single data rate architecture for command and address; all control and address latched at rising edge of the clock
  • Double data rate architecture for data bus; two data accesses per clock cycle
  • Differential clock inputs (CK_t, CK_c)
  • Bi-directional differential data strobe (DQS_t, DQS_c)
  • Source synchronous data transaction aligned to bi-directional differential data strobe (DQS_t, DQS_c)
  • DMI pin support for write data masking and DBIdc functionality
  • Programmable RL (Read Latency) and WL (Write Latency)
  • Burst length: 16 (default), 32 and On-the-fly
  • On the fly mode enabled by MRS
  • Auto refresh and self refresh supported
  • All bank auto refresh and directed per bank auto refresh supported
  • Auto TCSR (Temperature Compensated Self Refresh)
  • PASR (Partial Array Self Refresh) by Bank Mask and Segment Mask
  • Background ZQ Calibration
Product Image
H9HCNNN8KUMLHR Memory IC Chip 2-Channel High-Speed 3.733GHz 8Gbit SDRAM LPDDR4 Memory 0
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Frequently Asked Questions
Are your products original?
Yes, all products are original, new original import is our purpose.
Which Certificates do you have?
We are ISO 9001:2015 Certified Company and member of ERAI.
Can you support small quantity order or sample? Is the sample free?
Yes, we support sample order and small order. Sample cost is different according to your order or project.
How to ship my order? Is it safe?
We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
What about the lead time?
We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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