IPT007N06N Integrated Circuit Chip 60V OptiMOS™ N-Channel Power MOSFET Transistor with 300A Continuous Drain Current and 750 uOhms Drain-Source Resistance

Name: IPT007N06N Integrated Circuit Chip 60V OptiMOS™ N-Channel Power MOSFET Transistor with 300A Continuous Drain Current and 750 uOhms Drain-Source Resistance
Brand: ShenZhen Mingjiada Electronics Co.,Ltd.
SKU: IPT007N06N
Availability: InStock

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IPT007N06N Integrated Circuit Chip 60V OptiMOS™ N-Channel Power MOSFET Transistor with 300A Continuous Drain Current and 750 uOhms Drain-Source Resistance

Large Image : IPT007N06N Integrated Circuit Chip 60V OptiMOS™ N-Channel Power MOSFET Transistor with 300A Continuous Drain Current and 750 uOhms Drain-Source Resistance

Product Details:

Place of Origin:	CN
Brand Name:	Original Factory
Certification:	Lead free / RoHS Compliant
Model Number:	IPT007N06N

Payment & Shipping Terms:

Minimum Order Quantity:	10
Price:	Contact for Sample
Packaging Details:	HSOF-8
Delivery Time:	5-8 work days
Payment Terms:	T/T,L/C,Western Union

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IPT007N06N Integrated Circuit Chip 60V OptiMOS™ N-Channel Power MOSFET Transistor with 300A Continuous Drain Current and 750 uOhms Drain-Source Resistance

Description

Part Number:	IPT007N06N	Vds - Drain-Source Breakdown Voltage::	60 V
Id - Continuous Drain Current::	300 A	Rds On - Drain-Source Resistance::	750 UOhms
Vgs - Gate-Source Voltage::	- 20 V, 20 V	Vgs Th - Gate-Source Threshold Voltage::	2.1 V
Highlight:	60V Drain-Source Voltage Integrated Circuit Chip , 300A Continuous Drain Current Power MOSFET Transistor , 750 uOhms Drain-Source Resistance OptiMOS™ N-Channel

IPT007N06N Integrated Circuit Chip 60V OptiMOS™ N-Channel Power MOSFET Transistor

Product Overview

IPT007N06N is a 60V OptiMOS™ N-Channel Power MOSFET Transistor featuring a TO-Leadless package optimized for high current applications including forklifts, light electric vehicles (LEV), point-of-load (POL) systems, and telecommunications. This package delivers exceptional efficiency, superior EMI performance, excellent thermal characteristics, and space-saving design for high-power applications.

Specifications

Parameter	Value
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	0.75mOhm @ 150A, 10V
Vgs(th) (Max) @ Id	3.3V @ 280µA
Gate Charge (Qg) (Max) @ Vgs	287 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	16000 pF @ 30 V
Power Dissipation (Max)	375W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)

Key Features

Industry's lowest R_DS(on)
Highest current capability >480A
Low package parasitics and inductances

Performance Benefits

Reduced paralleling and cooling requirements
Highest system reliability
System cost reduction
Enables very compact design

Applications

DC-DC converter high-voltage systems
Fuel-cell control unit (FCCU)
Cordless power tools and outdoor power equipment
Industrial applications

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Frequently Asked Questions

Are your products original?

Yes, all products are original. New original import is our primary business focus.

Which Certificates do you have?

We are ISO 9001:2015 Certified Company and member of ERAI.

Can you support small quantity order or sample? Is the sample free?

Yes, we support sample orders and small quantity orders. Sample cost varies according to your order requirements or project specifications.

How to ship my order? Is it safe?

We use express carriers including DHL, FedEx, UPS, TNT, and EMS. We can also use your preferred forwarder. Products are carefully packaged to ensure safety, and we take responsibility for any damage to your order.

What about the lead time?

We can ship stock parts within 5 working days. For items not in stock, we will confirm the lead time based on your order quantity.

Tag:

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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IPT007N06N Integrated Circuit Chip 60V OptiMOS™ N-Channel Power MOSFET Transistor with 300A Continuous Drain Current and 750 uOhms Drain-Source Resistance

IPT007N06N Integrated Circuit Chip 60V OptiMOS™ N-Channel Power MOSFET Transistor with 300A Continuous Drain Current and 750 uOhms Drain-Source Resistance

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