TC58NVG1S3HBAI6 Memory IC Chip 2 Gbit NAND E2PROM with 3.3V Supply and Parallel Interface

Single 3.3V 2Gbit NAND Electrically Erasable And Programmable Read-Only Memory

The TC58NVG1S3HBAI6 is a single 3.3V 2Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E²PROM) organized as (2048 + 128) Bytes × 64 pages × 2048 blocks. The device features two 2176-byte static registers that enable program and read data transfer between the register and memory cell array in 2176-byte increments. Erase operations are implemented in single block units (128 KBytes + 8 KBytes: 2176 Bytes × 64 pages).

This serial-type memory device utilizes I/O pins for address and data input/output as well as command inputs. With automatic Erase and Program operations, it is ideally suited for applications requiring high-density non-volatile memory data storage, including solid-state file storage, voice recording, image file memory for still cameras, and similar systems.