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W631GU6MB-11 Memory IC Chip 1 Gbit Parallel 933 MHz DDR3L SDRAM

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china ShenZhen Mingjiada Electronics Co.,Ltd. certification
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W631GU6MB-11 Memory IC Chip 1 Gbit Parallel 933 MHz DDR3L SDRAM

W631GU6MB-11 Memory IC Chip 1 Gbit Parallel 933 MHz DDR3L SDRAM
W631GU6MB-11 Memory IC Chip 1 Gbit Parallel 933 MHz DDR3L SDRAM

Large Image :  W631GU6MB-11 Memory IC Chip 1 Gbit Parallel 933 MHz DDR3L SDRAM

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: W631GU6MB-11
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: VFBGA-96
Delivery Time: 5-8 work days
Payment Terms: T/T,L/C,Western Union
Contact Now

W631GU6MB-11 Memory IC Chip 1 Gbit Parallel 933 MHz DDR3L SDRAM

Description
Part Number: W631GU6MB-11 Memory Size:: 1 Gbit
Data Bus Width:: 16 Bit Maximum Clock Frequency:: 933 MHz
Organisation:: 64 M X 16 Supply Current - Max:: 240 MA
Highlight:

1 Gbit Memory IC Chip

,

933 MHz DDR3L SDRAM

,

Parallel Memory IC Chip

W631GU6MB-11 Memory IC Chip
1Gbit Parallel 933MHz DDR3L SDRAM Memory
Product Overview
The W631GU6MB-11 is a 1Gbit DDR3L SDRAM organized as 8,388,608 words across 8 banks with 16-bit architecture. This high-performance memory device delivers transfer rates up to 2133 MT/s (DDR3L-2133) for diverse industrial and computing applications.
Technical Specifications
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR3L
Memory Size 1Gbit
Memory Organization 64M x 16
Memory Interface Parallel
Clock Frequency 933 MHz
Access Time 20 ns
Voltage Supply 1.283V ~ 1.45V
Operating Temperature 0°C ~ 95°C (TC)
Key Features
  • Power Supply: 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45V
  • Backward compatible to VDD, VDDQ = 1.5V ± 0.075V
  • Double Data Rate architecture: two data transfers per clock cycle
  • Eight internal banks for concurrent operation
  • 8-bit prefetch architecture
  • CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14
  • Burst length 8 (BL8) and burst chop 4 (BC4) modes
  • Programmable read burst ordering: interleaved or nibble sequential
  • Bi-directional, differential data strobes (DQS and DQS#)
  • DLL aligns DQ and DQS transitions with clock
  • Differential clock inputs (CK and CK#)
  • Posted CAS with programmable additive latency
  • Auto-precharge operation for read and write bursts
  • Refresh, Self-Refresh, Auto Self-refresh and Partial array self refresh
  • Precharged Power Down and Active Power Down
  • Data masks (DM) for write data
  • Programmable CAS Write Latency (CWL) per operating frequency
  • Multi purpose register for system timing calibration
  • System level timing calibration support via write leveling
  • ZQ Calibration for output driver and ODT
  • Asynchronous RESET# pin for initialization
  • Programmable on-die termination (ODT)
  • Dynamic ODT mode for improved signal integrity
  • 2K Byte page size
  • VFBGA 96 Ball package (7.5 x 13 mm², 1.0 mm thickness)
  • RoHS compliant, lead-free materials
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Frequently Asked Questions
Are your products original?
Yes, all products are original, new original import is our purpose.
Which Certificates do you have?
We are ISO 9001:2015 Certified Company and member of ERAI.
Can you support small quantity order or sample? Is the sample free?
Yes, we support sample orders and small orders. Sample cost varies according to your order or project requirements.
How to ship my order? Is it safe?
We use express carriers including DHL, FedEx, UPS, TNT, and EMS. We can also use your preferred forwarder. Products are securely packaged to ensure safety, and we take responsibility for any product damage during shipping.
What about the lead time?
We can ship stock parts within 5 working days. For non-stock items, we will confirm lead time based on your order quantity.

Tag:

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USB PD Controller QFN20,

USB PD Controller MPQ5031

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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