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IRFP4468PBF Power MOSFET Integrated Circuit Chip 100V Drain-Source Voltage 290A Continuous Drain Current 2mOhm Drain-Source Resistance in TO-247-3 Package

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IRFP4468PBF Power MOSFET Integrated Circuit Chip 100V Drain-Source Voltage 290A Continuous Drain Current 2mOhm Drain-Source Resistance in TO-247-3 Package

IRFP4468PBF Power MOSFET Integrated Circuit Chip 100V Drain-Source Voltage 290A Continuous Drain Current 2mOhm Drain-Source Resistance in TO-247-3 Package
IRFP4468PBF Power MOSFET Integrated Circuit Chip 100V Drain-Source Voltage 290A Continuous Drain Current 2mOhm Drain-Source Resistance in TO-247-3 Package

Large Image :  IRFP4468PBF Power MOSFET Integrated Circuit Chip 100V Drain-Source Voltage 290A Continuous Drain Current 2mOhm Drain-Source Resistance in TO-247-3 Package

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: IRFP4468PBF
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: TO-247-3
Delivery Time: 3-5 work days
Payment Terms: T/T
Supply Ability: 10000 Pieces per Day

IRFP4468PBF Power MOSFET Integrated Circuit Chip 100V Drain-Source Voltage 290A Continuous Drain Current 2mOhm Drain-Source Resistance in TO-247-3 Package

Description
Part Number: IRFP4468PBF Vds - Drain-Source Breakdown Voltage:: 100 V
Id - Continuous Drain Current:: 290 A Rds On - Drain-Source Resistance:: 2 MOhms
Vgs - Gate-Source Voltage:: - 20 V, 20 V Vgs Th - Gate-Source Threshold Voltage:: 1.8 V
Highlight:

100V Drain-Source Voltage Power MOSFET

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290A Continuous Drain Current Integrated Circuit Chip

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2mOhm Drain-Source Resistance StrongIRFET

IRFP4468PBF Integrated Circuit Chip
100V Single N-Channel StrongIRFET™ Power MOSFET in TO-247-3 Package
Product Overview
The IRFP4468PBF StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. These devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Technical Specifications
Parameter Value
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 180A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 540 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 19860 pF @ 50 V
Power Dissipation (Max) 520W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Key Features
  • Optimized for broadest availability
  • Product qualification according to JEDEC
  • Industry standard through-hole power
  • High-current rating
Product Benefits
  • Wide distribution availability
  • Industry standard qualification level
  • Drop-in replacement with standard pinout
  • High current carrying capability
Applications
  • Battery energy storage (BESS)
  • EV charging
  • DIN rail power supply solutions
  • 1-phase string inverter solutions
  • Offline UPS - high frequency transformer
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Frequently Asked Questions
Are your products original?
Yes, all products are original, new original import is our purpose.
Which Certificates do you have?
We are ISO 9001:2015 Certified Company and member of ERAI.
Can you support small quantity order or sample? Is the sample free?
Yes, we support sample order and small order. Sample cost is different according to your order or project.
How to ship my order? Is it safe?
We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
What about the lead time?
We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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