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LMG1020YFFR Integrated Circuit Chip Single Channel Low-Side Gate Driver with Ultra-Fast Propagation Delay for GaN FETs

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LMG1020YFFR Integrated Circuit Chip Single Channel Low-Side Gate Driver with Ultra-Fast Propagation Delay for GaN FETs

LMG1020YFFR Integrated Circuit Chip Single Channel Low-Side Gate Driver with Ultra-Fast Propagation Delay for GaN FETs
LMG1020YFFR Integrated Circuit Chip Single Channel Low-Side Gate Driver with Ultra-Fast Propagation Delay for GaN FETs

Large Image :  LMG1020YFFR Integrated Circuit Chip Single Channel Low-Side Gate Driver with Ultra-Fast Propagation Delay for GaN FETs

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: LMG1020YFFR
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: DSBGA-6
Delivery Time: 5-8 work days
Payment Terms: T/T,L/C,Western Union

LMG1020YFFR Integrated Circuit Chip Single Channel Low-Side Gate Driver with Ultra-Fast Propagation Delay for GaN FETs

Description
Part Number: LMG1020YFFR Propagation Delay - Max: 4.5 Ns
Voltage - Supply: 4.75V ~ 5.25V Operating Supply Current: 51 MA
Rise / Fall Time (Typ): 375ps, 350ps Operating Temperature: -40°C ~ 125°C (TJ)
Highlight:

Ultra-Fast Propagation Delay Gate Driver

,

Low-Side Driver Integrated Circuit Chip

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GaN FET Compatible LMG1020YFFR

LMG1020YFFR Integrated Circuit Chip Single Channel Low-Side Gate Driver DSBGA6
The LMG1020YFFR is a single, low-side driver specifically engineered for driving GaN FETs and logic-level MOSFETs in high-speed applications including LiDAR, time-of-flight systems, facial recognition, and various power converters requiring low-side drivers.
Product Overview
The design simplicity of the LMG1020YFFR enables extremely fast propagation delays of 2.5 nanoseconds and minimum pulse width of 1 nanosecond. The drive strength is independently adjustable for both pull-up and pull-down edges by connecting external resistors between the gate and OUTH and OUTL, respectively.
Technical Specifications
Parameter Value
Driven Configuration Low-Side
Channel Type Single
Number of Drivers 1
Gate Type MOSFET (N-Channel, P-Channel)
Voltage - Supply 4.75V ~ 5.25V
Logic Voltage - VIL, VIH 1.8V, 1.7V
Current - Peak Output (Source, Sink) 7A, 5A
Input Type Inverting, Non-Inverting
Rise / Fall Time (Typ) 375ps, 350ps
Operating Temperature -40°C ~ 125°C (TJ)
Mounting Type Surface Mount
Package / Case 6-UFBGA, DSBGA
Supplier Device Package 6-DSBGA
Key Features
  • Low-Side, Ultra-Fast Gate Driver for GaN and Silicon FETs
  • 1 ns Minimum Input Pulse Width
  • Up to 60 MHz Operation
  • 2.5 ns Typical, 4.5 ns Maximum Propagation Delay
  • 400 ps Typical Rise and Fall Time
  • 7-A Peak Source and 5-A Peak Sink Currents
  • 5-V Supply Voltage
  • UVLO and Overtemperature Protection
Applications
  • LiDAR Systems
  • Time-of-Flight Laser Drivers
  • Facial Recognition Systems
  • Class-E Wireless Chargers
  • VHF Resonant Power Converters
  • GaN-Based Synchronous Rectifier
  • Augmented Reality Devices
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Frequently Asked Questions
Are your products original?
Yes, all products are original, new original import is our purpose.
Which Certificates do you have?
We are ISO 9001:2015 Certified Company and member of ERAI.
Can you support small quantity order or sample? Is the sample free?
Yes, we support sample order and small order. Sample cost is different according to your order or project.
How to ship my order? Is it safe?
We use express carriers such as DHL, FedEx, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing to ensure safety, and we are responsible for product damage to your order.
What about the lead time?
We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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