CYEL18V2562-200BKXE Memory IC Chip 256 MBit Pseudostatic RAM with 1.8 V Operating Voltage and 200MHz Interface Frequency

Low-Power High Bandwidth Pseudostatic RAM Memory

The CYEL18V2562-200BKXE 256 Mb pSRAM device is a high-speed CMOS, self-refresh DRAM with HYPERBUS™ interface. The DRAM array uses dynamic cells that require periodic refresh. Refresh control logic within the device manages refresh operations on the DRAM array when the memory is not being actively read or written by the HYPERBUS™ interface master (host). Since the host is not required to manage refresh operations, the DRAM array appears to the host as though the memory uses static cells that retain data without refresh, making it accurately described as pseudo static RAM (PSRAM).