IPAW60R280P7S 600V 12A CoolMOS™ P7 Superjunction MOSFET Transistor Integrated Circuit Chip

Name: IPAW60R280P7S 600V 12A CoolMOS™ P7 Superjunction MOSFET Transistor Integrated Circuit Chip
Brand: ShenZhen Mingjiada Electronics Co.,Ltd.
SKU: IPAW60R280P7S
Availability: InStock

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IPAW60R280P7S 600V 12A CoolMOS™ P7 Superjunction MOSFET Transistor Integrated Circuit Chip

Large Image : IPAW60R280P7S 600V 12A CoolMOS™ P7 Superjunction MOSFET Transistor Integrated Circuit Chip

Product Details:

Place of Origin:	CN
Brand Name:	Original Factory
Certification:	Lead free / RoHS Compliant
Model Number:	IPAW60R280P7S

Payment & Shipping Terms:

Minimum Order Quantity:	10
Price:	Contact for Sample
Packaging Details:	TO-220-3
Delivery Time:	5-8 work days
Payment Terms:	T/T,L/C,Western Union

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IPAW60R280P7S 600V 12A CoolMOS™ P7 Superjunction MOSFET Transistor Integrated Circuit Chip

Description

Part Number:	IPAW60R280P7S	ID (@25°C) Max:	12 A
Drain To Source Voltage (Vdss):	600 V	Power Dissipation (Max):	24W (Tc)
Gate Charge (Qg) (Max) @ Vgs:	18 NC @ 10 V	Operating Temperature:	-40 °C To 150 °C
Highlight:	600V Drain to Source Voltage MOSFET Transistor , 12A Continuous Drain Current Integrated Circuit Chip , Superjunction Technology CoolMOS™ P7

IPAW60R280P7S Integrated Circuit Chip 600V CoolMOS™ P7 Superjunction MOSFET Transistors

The IPAW60R280P7S is a 600V CoolMOS™ P7 superjunction MOSFET transistor, representing the successor to the 600V CoolMOS™ P6 series. This advanced component balances high efficiency requirements with design process ease-of-use, featuring best-in-class R_on x A and inherently low gate charge (Q_G) from the CoolMOS™ 7th generation platform.

Technical Specifications

Parameter	Value
Series	CoolMOS™ P7
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (V_dss)	600 V
Continuous Drain Current (I_d) @ 25°C	12A (T_c)
Drive Voltage (Max R_ds On, Min R_ds On)	10V
R_ds On (Max) @ I_d, V_gs	280mΩ @ 3.8A, 10V
V_gs(th) (Max) @ I_d	4V @ 190µA
Gate Charge (Q_g) (Max) @ V_gs	18 nC @ 10 V
V_gs (Max)	±20V
Input Capacitance (C_iss) (Max) @ V_ds	761 pF @ 400 V
Power Dissipation (Max)	24W (T_c)
Operating Temperature	-40°C ~ 150°C (T_J)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-FP
Package / Case	TO-220-3 Full Pack

Key Features

600V P7 enables excellent FOM R_DS(on) x E_oss and R_DS(on) x Q_G
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor R_G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts available

Performance Benefits

Excellent FOMs R_DS(on) x Q_G/R_DS(on) x E_oss enable higher efficiency
Enhanced ease-of-use in design and implementation
ESD protection prevents failures in manufacturing environments
Integrated R_G reduces MOSFET oscillation sensitivity
Suitable for both hard and resonant switching topologies including PFC and LLC
Excellent ruggedness during hard commutation of the body diode in LLC topology
Versatile application across various end uses and output powers
Parts available for both consumer and industrial applications

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Frequently Asked Questions

Are your products original?

Yes, all products are original. New original import is our purpose.

Which Certificates do you have?

We are ISO 9001:2015 Certified Company and member of ERAI.

Can you support small quantity order or sample? Is the sample free?

Yes, we support sample orders and small orders. Sample cost varies according to your order or project requirements.

How to ship my order? Is it safe?

We use express carriers including DHL, FedEx, UPS, TNT, and EMS. We can also use your suggested forwarder. Products are securely packaged to ensure safety, and we are responsible for any product damage to your order.

What about the lead time?

We can ship stock parts within 5 working days. For items not in stock, we will confirm lead time based on your order quantity.

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Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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