IQEH46NE2LM7UCGSC Integrated Circuit Chip Power Transistor with 25V Drain-Source Breakdown Voltage 440A Continuous Drain Current and 150W Power Dissipation

Name: IQEH46NE2LM7UCGSC Integrated Circuit Chip Power Transistor with 25V Drain-Source Breakdown Voltage 440A Continuous Drain Current and 150W Power Dissipation
Brand: ShenZhen Mingjiada Electronics Co.,Ltd.
SKU: IQEH46NE2LM7UCGSC
Availability: InStock

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IQEH46NE2LM7UCGSC Integrated Circuit Chip Power Transistor with 25V Drain-Source Breakdown Voltage 440A Continuous Drain Current and 150W Power Dissipation

Large Image : IQEH46NE2LM7UCGSC Integrated Circuit Chip Power Transistor with 25V Drain-Source Breakdown Voltage 440A Continuous Drain Current and 150W Power Dissipation

Product Details:

Place of Origin:	CN
Brand Name:	Original Factory
Certification:	Lead free / RoHS Compliant
Model Number:	IQEH46NE2LM7UCGSC

Payment & Shipping Terms:

Minimum Order Quantity:	10
Price:	Contact for Sample
Packaging Details:	PG-WHTFN-9
Delivery Time:	5-8 work days
Payment Terms:	T/T,L/C,Western Union

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IQEH46NE2LM7UCGSC Integrated Circuit Chip Power Transistor with 25V Drain-Source Breakdown Voltage 440A Continuous Drain Current and 150W Power Dissipation

Description

Part Number:	IQEH46NE2LM7UCGSC	Transistor Polarit:	N-Channel
Vds - Drain-Source Breakdown Voltage:	25 V	Id - Continuous Drain Current:	440 A
Qg - Gate Charge:	27 NC	Pd - Power Dissipation:	150 W
Highlight:	25V Drain-Source Breakdown Voltage Power Transistor , 440A Continuous Drain Current MOSFET , 150W Power Dissipation Integrated Circuit Chip

IQEH46NE2LM7UCGSC Integrated Circuit Chip 25V OptiMOS 7 Power Transistor PG-WHTFN-9

Product Overview

The IQEH46NE2LM7UCGSC is an OptiMOS™ 7 25V switching optimized power MOSFET transistor designed for both hard- and soft-switching topologies. This N-Channel device comes in a PQFN 3.3x3.3 Source-Down package (PG-WHTFN-9) and delivers application-optimized performance for demanding applications including data centers, servers, AI systems, and industrial power solutions.

Technical Specifications

Product Category	MOSFETs
Technology	Si
Mounting Style	SMD/SMT
Package / Case	PG-WHTFN-9
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	25 V
Id - Continuous Drain Current	440 A
Rds On - Drain-Source Resistance	460 uOhms
Vgs - Gate-Source Voltage	16 V
Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	27 nC
Operating Temperature Range	-55℃ to +175℃
Pd - Power Dissipation	150 W
Channel Mode	Enhancement

Key Features

N‑channel, logic level operation
Optimized for hard‑switching topologies
Excellent Figure of Merit (FOMoss)
Superior Miller ratio for enhanced dv/dt ruggedness
Very low on‑resistance RDS(on)
Superior thermal resistance with dual‑side cooling capability
100% avalanche tested for reliability
Pb‑free lead plating and RoHS compliant
Halogen‑free according to IEC61249‑2‑21 standards

Applications

Data Center / AI: Intermediate Bus Converter (IBC), High-Density DC-DC Converters
Communications & Servers: 12V/24V Power Modules, Hard-Switching PFC, OR-ing Circuits
Industrial Power: High-Frequency SMPS, PV Inverters, Energy Storage Systems

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Frequently Asked Questions

Are your products original?

Yes, all products are original, new original import is our purpose.

Which Certificates do you have?

We are ISO 9001:2015 Certified Company and member of ERAI.

Can you support small quantity order or sample? Is the sample free?

Yes, we support sample orders and small orders. Sample cost varies according to your order or project requirements.

How to ship my order? Is it safe?

We use express carriers including DHL, FedEx, UPS, TNT, and EMS. We can also use your suggested forwarder. Products are professionally packaged to ensure safety, and we take responsibility for any product damage to your order.

What about the lead time?

We can ship stock parts within 5 working days. For items not in stock, we will confirm lead time based on your order quantity.

Tag:

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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IQEH46NE2LM7UCGSC Integrated Circuit Chip Power Transistor with 25V Drain-Source Breakdown Voltage 440A Continuous Drain Current and 150W Power Dissipation

IQEH46NE2LM7UCGSC Integrated Circuit Chip Power Transistor with 25V Drain-Source Breakdown Voltage 440A Continuous Drain Current and 150W Power Dissipation

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