IRFB3207PBF N-Channel Power MOSFET Transistor with 75V Drain-Source Voltage and 180A Continuous Drain Current in TO-220-3 Package

Name: IRFB3207PBF N-Channel Power MOSFET Transistor with 75V Drain-Source Voltage and 180A Continuous Drain Current in TO-220-3 Package
Brand: ShenZhen Mingjiada Electronics Co.,Ltd.
SKU: IRFB3207PBF
Availability: InStock

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IRFB3207PBF N-Channel Power MOSFET Transistor with 75V Drain-Source Voltage and 180A Continuous Drain Current in TO-220-3 Package

Large Image : IRFB3207PBF N-Channel Power MOSFET Transistor with 75V Drain-Source Voltage and 180A Continuous Drain Current in TO-220-3 Package

Product Details:

Place of Origin:	CN
Brand Name:	Original Factory
Certification:	Lead free / RoHS Compliant
Model Number:	IRFB3207PBF

Payment & Shipping Terms:

Minimum Order Quantity:	10
Price:	Contact for Sample
Packaging Details:	TO-220-3
Delivery Time:	5-8 work days
Payment Terms:	T/T,L/C,Western Union

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IRFB3207PBF N-Channel Power MOSFET Transistor with 75V Drain-Source Voltage and 180A Continuous Drain Current in TO-220-3 Package

Description

Part Number:	IRFB3207PBF	Transistor Polarit:	N-Channel
Vds - Drain-Source Breakdown Voltage:	75 V	Id - Continuous Drain Current:	180 A
Pd - Power Dissipation:	330 W	Qg - Gate Charge:	180 NC
Highlight:	75V Drain-Source Voltage Power MOSFET Transistor , 180A Continuous Drain Current Integrated Circuit Chip , TO-220-3 Package N-Channel MOSFET

IRFB3207PBF Integrated Circuit Chip

N-Channel 75V 170A Power MOSFET Transistors in TO-220-3 Package

Product Overview

IRFB3207PBF is an N-Channel 75V 170A Power MOSFET Transistor housed in a TO-220-3 package, designed for high-performance power switching applications.

Technical Specifications

Parameter	Value
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75 V
Continuous Drain Current (Id) @ 25°C	170A (Tc)
Drive Voltage	10V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	260 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7600 pF @ 50 V
Power Dissipation (Max)	330W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)

Key Benefits

Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free Construction

Applications

High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply Systems
High Speed Power Switching
Hard Switched and High Frequency Circuits

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Frequently Asked Questions

Are your products original?

Yes, all products are original, new original import is our purpose.

Which Certificates do you have?

We are ISO 9001:2015 Certified Company and member of ERAI.

Can you support small quantity order or sample? Is the sample free?

Yes, we support sample order and small order. Sample cost is different according to your order or project.

How to ship my order? Is it safe?

We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.

What about the lead time?

We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Tag:

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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IRFB3207PBF N-Channel Power MOSFET Transistor with 75V Drain-Source Voltage and 180A Continuous Drain Current in TO-220-3 Package

IRFB3207PBF N-Channel Power MOSFET Transistor with 75V Drain-Source Voltage and 180A Continuous Drain Current in TO-220-3 Package

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