IQE036N08NM6CGSC Integrated Circuit Chip OptiMOS™ 6 Power MOSFET with 80V Drain to Source Voltage 175°C Operating Temperature and 3.6mOhm Rds On

Name: IQE036N08NM6CGSC Integrated Circuit Chip OptiMOS™ 6 Power MOSFET with 80V Drain to Source Voltage 175°C Operating Temperature and 3.6mOhm Rds On
Brand: ShenZhen Mingjiada Electronics Co.,Ltd.
SKU: IQE036N08NM6CGSC
Availability: InStock

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IQE036N08NM6CGSC Integrated Circuit Chip OptiMOS™ 6 Power MOSFET with 80V Drain to Source Voltage 175°C Operating Temperature and 3.6mOhm Rds On

Large Image : IQE036N08NM6CGSC Integrated Circuit Chip OptiMOS™ 6 Power MOSFET with 80V Drain to Source Voltage 175°C Operating Temperature and 3.6mOhm Rds On

Product Details:

Place of Origin:	CN
Brand Name:	Original Factory
Certification:	Lead free / RoHS Compliant
Model Number:	IQE036N08NM6CGSC

Payment & Shipping Terms:

Minimum Order Quantity:	10
Price:	Contact for Sample
Packaging Details:	PG-WHTFN-9
Delivery Time:	5-8 work days
Payment Terms:	T/T,L/C,Western Union

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IQE036N08NM6CGSC Integrated Circuit Chip OptiMOS™ 6 Power MOSFET with 80V Drain to Source Voltage 175°C Operating Temperature and 3.6mOhm Rds On

Description

Part Number:	IQE036N08NM6CGSC	Series:	OptiMOS™ 6
Drain To Source Voltage (Vdss):	80 V	Vgs(th) (Max) @ Id:	3.5V @ 49.8µA
Power Dissipation (Max):	2.5W (Ta), 125W (Tc)	Operating Temperature:	-55°C ~ 175°C
Highlight:	80V Drain to Source Voltage Power MOSFET , 175°C Operating Temperature Power MOSFET , 3.6mOhm Rds On Power MOSFET

IQE036N08NM6CGSC Integrated Circuit Chip OptiMOS™ 6 N-Channel Power MOSFET Transistors

IQE036N08NM6CGSC is an 80V OptiMOS™ 6 N-channel power MOSFET transistor in PQFN 3.3x3.3 Source Down Center Gate Dual-Side Cooling package.

Specifications

Series	OptiMOS™ 6
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	16.7A (Ta), 118A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Rds On (Max) @ Id, Vgs	3.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	3.5V @ 49.8µA
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2600 pF @ 40 V
Power Dissipation (Max)	2.5W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 175°C
Mounting Type	Surface Mount
Supplier Device Package	PG-WHTFN-9-1
Package / Case	9-PowerWDFN

Key Features

High performance silicon technology
Normal level gate drive
175°C rated
Industrial qualification
N-channel, normal level
Very low on-resistance RDS(on)
Excellent gate charge x RDS(on) product (FOM)
Very low reverse recovery charge (Qrr)
High avalanche energy rating

Applications

Telecommunications infrastructure
Photovoltaic systems
Server power supply units (PSU)
DC-DC power conversion

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Frequently Asked Questions

Are your products original?

Yes, all products are original, new original import is our purpose.

Which Certificates do you have?

We are ISO 9001:2015 Certified Company and member of ERAI.

Can you support small quantity order or sample? Is the sample free?

Yes, we support sample order and small order. Sample cost is different according to your order or project.

How to ship my order? Is it safe?

We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.

What about the lead time?

We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Tag:

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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IQE036N08NM6CGSC Integrated Circuit Chip OptiMOS™ 6 Power MOSFET with 80V Drain to Source Voltage 175°C Operating Temperature and 3.6mOhm Rds On

IQE036N08NM6CGSC Integrated Circuit Chip OptiMOS™ 6 Power MOSFET with 80V Drain to Source Voltage 175°C Operating Temperature and 3.6mOhm Rds On

IQE036N08NM6CGSC Integrated Circuit Chip OptiMOS™ 6 Power MOSFET with 80V Drain to Source Voltage 175°C Operating Temperature and 3.6mOhm Rds On

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