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Product Details:
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| Part Number: | IQE018N06NM6 | ID (@25°C) Max: | 178 A |
|---|---|---|---|
| QG (typ @10V): | 43 NC | RDS (on) (@10V) Max: | 1.8 MΩ |
| VDS Max: | 60 V | Operating Temperature: | -55 °C To 175 °C |
| Highlight: | 60V Power MOSFET Transistor,178 A Integrated Circuit Chip,1.8 mΩ OptiMOS™ 6 |
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The IQE018N06NM6 is a 60V OptiMOS™ 6 Power MOSFET Transistor in PG-TSON-8 package. Infineon's latest wafer technology delivers significant performance improvements over OptiMOS™ 5, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These enhancements result in higher system efficiency and power density for soft-switching topologies and low-frequency applications.
| ID (@25°C) max | 178 A |
| Polarity | N |
| QG (typ @10V) | 43 nC |
| RDS (on) (@10V) max | 1.8 mΩ |
| VDS max | 60 V |
| VGS(th) | 2.7 V |
| Operating Temperature | -55 °C to 175 °C |
| Package | PQFN 3.3x3.3 Source-Down |
General purpose motor drive
DC-DC power conversion
| Part Number | Package |
|---|---|
| IXXN100N60B3H1 | SOT-227-4 |
| IXA17IF1200HJ | TO-247-3 |
| IXXH60N65B4H1 | TO-247-3 |
| IXXK200N65B4 | TO-264-3 |
| IXXR110N65B4H1 | TO-247-3 |
| IXYH100N65C3 | TO-247-3 |
| IXYN82N120C3 | SOT-227-4 |
| IXXX160N65C4 | TO-247-3 |
| IXGX120N60A3 | TO-247-3 |
| IXXK110N65B4H1 | TO-264-3 |
| IXBA14N300HV | TO-263-3 |
| IXYP20N65C3D1M | TO-220-3 |
| IXXN340N65B4 | SOT-227-4 |
| MMIX1X340N65B4 | 24-PowerSMD |
| IXYT12N250CV1HV | TO-268-3 |
| IXYA30N120A3HV | TO-263-3 |
| IXYA12N250CHV | TO-263-3 |
| IXGA20N250HV-TRL | TO-263-3 |
| IXYN100N65B3D1 | SOT-227-4 |
| IXA4IF1200TC-TRL | TO-268-3 |
| IXXT100N75B4HV | TO-263-3 |
| IXYP30N120A4 | TO-220-3 |
| IXYP20N120A4 | TO-220-3 |
| IXYP20N120B4 | TO-220-3 |
| IXYH40N120B4 | TO-247-3 |
| IXYP24N100A4 | TO-220-3 |
| IXYH20N65B3 | TO-247-3 |
| IXYT40N120A4HV | TO-268-3 |
| IXYP20N120C4 | TO-220-3 |
| IXYP15N65B3D1 | TO-220-3 |
Contact Person: Sales Manager
Tel: 86-13410018555
Fax: 86-0755-83957753