IQEH54NE2LM7UCG OptiMOS™ 7 N-Channel Power MOSFET with 540 uOhms Drain-Source Resistance and 175°C Max Operating Temperature

Name: IQEH54NE2LM7UCG OptiMOS™ 7 N-Channel Power MOSFET with 540 uOhms Drain-Source Resistance and 175°C Max Operating Temperature
Brand: ShenZhen Mingjiada Electronics Co.,Ltd.
SKU: IQEH54NE2LM7UCG
Availability: InStock

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IQEH54NE2LM7UCG OptiMOS™ 7 N-Channel Power MOSFET with 540 uOhms Drain-Source Resistance and 175°C Max Operating Temperature

Large Image : IQEH54NE2LM7UCG OptiMOS™ 7 N-Channel Power MOSFET with 540 uOhms Drain-Source Resistance and 175°C Max Operating Temperature

Product Details:

Place of Origin:	CN
Brand Name:	Original Factory
Certification:	Lead free / RoHS Compliant
Model Number:	IQEH54NE2LM7UCG

Payment & Shipping Terms:

Minimum Order Quantity:	10
Price:	Contact for Sample
Packaging Details:	PG-TTFN-9-3
Delivery Time:	5-8 work days
Payment Terms:	T/T,L/C,Western Union

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IQEH54NE2LM7UCG OptiMOS™ 7 N-Channel Power MOSFET with 540 uOhms Drain-Source Resistance and 175°C Max Operating Temperature

Description

Part Number:	IQEH54NE2LM7UCG	Rds On - Drain-Source Resistance::	540 UOhms
Vgs - Gate-Source Voltage::	16 V	Vgs Th - Gate-Source Threshold Voltage::	2 V
Minimum Operating Temperature::	- 55 C	Maximum Operating Temperature::	+ 175 C
Highlight:	540 uOhms Drain-Source Resistance Power MOSFET , 175°C Maximum Operating Temperature N-Channel MOSFET , 52A Continuous Drain Current OptiMOS™ 7

IQEH54NE2LM7UCG Integrated Circuit Chip OptiMOS™ 7 N-Channel Power MOSFET Transistors

IQEH54NE2LM7UCG is an OptiMOS™ 7 N-Channel Power MOSFET Transistor in PG-TTFN-9-3 Package, designed for high-performance power applications.

Technical Specifications

Parameter	Value
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	52A (Ta), 406A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	0.54mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 432µA
Gate Charge (Qg) (Max) @ Vgs	57 nC @ 10 V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	6100 pF @ 12 V
Power Dissipation (Max)	2.5W (Ta), 150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)

Key Features

Hard- and soft-switching optimizations
Hard-switch: Miller ratio, FOM, RDS(on)10
Soft-switch: RDS(on)45, FOMQg
+175°C junction temperature rating
Source-down package variants
Center-gate footprint, DSC overmolded

Performance Benefits

Application-specific optimization
Improved performance efficiency
Advanced induced turn-on ruggedness
Reduced driver and switching losses
Reduced conduction losses
Increased reliability and power density
Superior thermal capabilities
Reduced package parasitics
Simplified paralleling of MOSFETs

Target Applications

Data center and AI data center solutions
48 V intermediate bus converter (IBC)
Telecommunications infrastructure
Power conversion systems
Server power supply units (PSU)

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Frequently Asked Questions

Are your products original?

Yes, all products are original, new original import is our purpose.

Which Certificates do you have?

We are ISO 9001:2015 Certified Company and member of ERAI.

Can you support small quantity order or sample? Is the sample free?

Yes, we support sample order and small order. Sample cost is different according to your order or project.

How to ship my order? Is it safe?

We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.

What about the lead time?

We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Tag:

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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IQEH54NE2LM7UCG OptiMOS™ 7 N-Channel Power MOSFET with 540 uOhms Drain-Source Resistance and 175°C Max Operating Temperature

IQEH54NE2LM7UCG OptiMOS™ 7 N-Channel Power MOSFET with 540 uOhms Drain-Source Resistance and 175°C Max Operating Temperature

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