IQEH64NE2LM7UCGSC Integrated Circuit Chip 25V 48A N-Channel Power MOSFET Transistor in PG-WHTFN-9-1 Package

Name: IQEH64NE2LM7UCGSC Integrated Circuit Chip 25V 48A N-Channel Power MOSFET Transistor in PG-WHTFN-9-1 Package
Brand: ShenZhen Mingjiada Electronics Co.,Ltd.
SKU: IQEH64NE2LM7UCGSC
Availability: InStock

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IQEH64NE2LM7UCGSC Integrated Circuit Chip 25V 48A N-Channel Power MOSFET Transistor in PG-WHTFN-9-1 Package

Large Image : IQEH64NE2LM7UCGSC Integrated Circuit Chip 25V 48A N-Channel Power MOSFET Transistor in PG-WHTFN-9-1 Package

Product Details:

Place of Origin:	CN
Brand Name:	Original Factory
Certification:	Lead free / RoHS Compliant
Model Number:	IQEH64NE2LM7UCGSC

Payment & Shipping Terms:

Minimum Order Quantity:	10
Price:	Contact for Sample
Packaging Details:	PG-WHTFN-9-1
Delivery Time:	5-8 work days
Payment Terms:	T/T,L/C,Western Union

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IQEH64NE2LM7UCGSC Integrated Circuit Chip 25V 48A N-Channel Power MOSFET Transistor in PG-WHTFN-9-1 Package

Description

Part Number:	IQEH64NE2LM7UCGSC	Number Of Channels::	1 Channel
Fall Time::	3.6 Ns	Forward Transconductance - Min::	50 S
Rise Time::	1.6 Ns	Typical Turn-Off Delay Time::	25.5 Ns
Highlight:	25V Integrated Circuit Chip , 48A Power MOSFET Transistor , PG-WHTFN-9-1 Package N-Channel MOSFET

IQEH64NE2LM7UCGSC Integrated Circuit Chip

25V 48A N-Channel Power MOSFET Transistors in PG-WHTFN-9-1 Package

Product Overview

IQEH64NE2LM7UCGSC is a high-performance 25V 48A N-Channel Power MOSFET Transistor packaged in PG-WHTFN-9-1 format, designed for demanding power management applications.

Technical Specifications

Parameter	Value
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	48A (Ta), 348A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	0.64mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 370µA
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 10 V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	5200 pF @ 12 V
Power Dissipation (Max)	2.5W (Ta), 130W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)

Key Features

Hard- and soft-switching optimizations
Hard-switch: Miller ratio, FOM, RDS(on)10
Soft-switch: RDS(on)45, FOMQg
+175°C junction temperature rating
Source-down package variants
Center-gate footprint, DSC overmolded

Performance Benefits

Application-specific optimization
Improved performance efficiency
Advanced induced turn-on ruggedness
Reduced driver and switching losses
Reduced conduction losses
Increased reliability and power density
Superior thermal capabilities
Reduced package parasitics
Simplified paralleling of MOSFETs

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Frequently Asked Questions

Are your products original?

Yes, all products are original, new original import is our purpose.

Which Certificates do you have?

We are ISO 9001:2015 Certified Company and member of ERAI.

Can you support small quantity order or sample? Is the sample free?

Yes, we support sample order and small order. Sample cost is different according to your order or project.

How to ship my order? Is it safe?

We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.

What about the lead time?

We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Tag:

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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IQEH64NE2LM7UCGSC Integrated Circuit Chip 25V 48A N-Channel Power MOSFET Transistor in PG-WHTFN-9-1 Package

IQEH64NE2LM7UCGSC Integrated Circuit Chip 25V 48A N-Channel Power MOSFET Transistor in PG-WHTFN-9-1 Package

IQEH64NE2LM7UCGSC Integrated Circuit Chip 25V 48A N-Channel Power MOSFET Transistor in PG-WHTFN-9-1 Package

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