ISZ023N06LM6 Integrated Circuit Chip OptiMOS™ 6 Power MOSFET Transistor with 149A Continuous Drain Current 2.3 mOhms Drain-Source Resistance and 100W Power Dissipation

Name: ISZ023N06LM6 Integrated Circuit Chip OptiMOS™ 6 Power MOSFET Transistor with 149A Continuous Drain Current 2.3 mOhms Drain-Source Resistance and 100W Power Dissipation
Brand: ShenZhen Mingjiada Electronics Co.,Ltd.
SKU: ISZ023N06LM6
Availability: InStock

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ISZ023N06LM6 Integrated Circuit Chip OptiMOS™ 6 Power MOSFET Transistor with 149A Continuous Drain Current 2.3 mOhms Drain-Source Resistance and 100W Power Dissipation

Large Image : ISZ023N06LM6 Integrated Circuit Chip OptiMOS™ 6 Power MOSFET Transistor with 149A Continuous Drain Current 2.3 mOhms Drain-Source Resistance and 100W Power Dissipation

Product Details:

Place of Origin:	CN
Brand Name:	Original Factory
Certification:	Lead free / RoHS Compliant
Model Number:	ISZ023N06LM6

Payment & Shipping Terms:

Minimum Order Quantity:	10
Price:	Contact for Sample
Packaging Details:	PG-TSDSON-8
Delivery Time:	5-8 work days
Payment Terms:	T/T,L/C,Western Union

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ISZ023N06LM6 Integrated Circuit Chip OptiMOS™ 6 Power MOSFET Transistor with 149A Continuous Drain Current 2.3 mOhms Drain-Source Resistance and 100W Power Dissipation

Description

Part Number:	ISZ023N06LM6	Rds On - Drain-Source Resistance::	2.3 MOhms
Pd - Power Dissipation::	100 W	Fall Time::	2.9 Ns
Typical Turn-Off Delay Time::	21.1 Ns	Typical Turn-On Delay Time::	5.9 Ns
Highlight:	149A Continuous Drain Current Power MOSFET Transistor , 2.3 mOhms Drain-Source Resistance Integrated Circuit Chip , 100W Power Dissipation OptiMOS™ 6

ISZ023N06LM6 Integrated Circuit Chip 149A OptiMOS™ 6 N-Channel Power MOSFET Transistors

ISZ072N06NM6 is OptiMOS™ 6 60V 194A N-Channel Power MOSFET Transistors in PG-TSDSON-8 Package.

Technical Specifications

Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	149 A
Rds On - Drain-Source Resistance:	2.3 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	2.3 V
Qg - Gate Charge:	22 nC
Minimum Operating Temperature:	-55°C
Maximum Operating Temperature:	+175°C
Pd - Power Dissipation:	100 W
Channel Mode:	Enhancement
Configuration:	Single
Fall Time:	2.9 ns
Forward Transconductance - Min:	55 S
Product Type:	MOSFETs
Rise Time:	1.5 ns
Typical Turn-Off Delay Time:	21.1 ns
Typical Turn-On Delay Time:	5.9 ns

Key Features

High performance silicon technology
Soft-switching optimized
Normal level gate drive
175°C rated
Industrial qualification

Performance Benefits

Lower conduction losses than OptiMOS™ 5
Lower switching losses than OptiMOS™ 5
Improved performance efficiency
Superior power handling capability
Robust reliable performance

Applications

General purpose motor drive, DC-DC power conversion

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Frequently Asked Questions

Are your products original?

Yes, all products are original, new original import is our purpose.

Which Certificates do you have?

We are ISO 9001:2015 Certified Company and member of ERAI.

Can you support small quantity order or sample? Is the sample free?

Yes, we support sample order and small order. Sample cost is different according to your order or project.

How to ship my order? Is it safe?

We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.

What about the lead time?

We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Tag:

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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ISZ023N06LM6 Integrated Circuit Chip OptiMOS™ 6 Power MOSFET Transistor with 149A Continuous Drain Current 2.3 mOhms Drain-Source Resistance and 100W Power Dissipation

ISZ023N06LM6 Integrated Circuit Chip OptiMOS™ 6 Power MOSFET Transistor with 149A Continuous Drain Current 2.3 mOhms Drain-Source Resistance and 100W Power Dissipation

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