ISC009N06NM6 OptiMOS™ 6 N-Channel Power MOSFET Transistor with 60V Drain-Source Voltage, 344A Continuous Drain Current, and 900 uOhms Drain-Source Resistance

Name: ISC009N06NM6 OptiMOS™ 6 N-Channel Power MOSFET Transistor with 60V Drain-Source Voltage, 344A Continuous Drain Current, and 900 uOhms Drain-Source Resistance
Brand: ShenZhen Mingjiada Electronics Co.,Ltd.
SKU: ISC009N06NM6
Availability: InStock

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ISC009N06NM6 OptiMOS™ 6 N-Channel Power MOSFET Transistor with 60V Drain-Source Voltage, 344A Continuous Drain Current, and 900 uOhms Drain-Source Resistance

Large Image : ISC009N06NM6 OptiMOS™ 6 N-Channel Power MOSFET Transistor with 60V Drain-Source Voltage, 344A Continuous Drain Current, and 900 uOhms Drain-Source Resistance

Product Details:

Place of Origin:	CN
Brand Name:	Original Factory
Certification:	Lead free / RoHS Compliant
Model Number:	ISC009N06NM6

Payment & Shipping Terms:

Minimum Order Quantity:	10
Price:	Contact for Sample
Packaging Details:	PG-TDSON-8
Delivery Time:	5-8 work days
Payment Terms:	T/T,L/C,Western Union

Contact Now

ISC009N06NM6 OptiMOS™ 6 N-Channel Power MOSFET Transistor with 60V Drain-Source Voltage, 344A Continuous Drain Current, and 900 uOhms Drain-Source Resistance

Description

Part Number:	ISC009N06NM6	Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	60 V	Id - Continuous Drain Current:	344 A
Rds On - Drain-Source Resistance:	900 UOhms	Qg - Gate Charge:	121 NC
Highlight:	60V Drain-Source Voltage Power MOSFET Transistor , 344A Continuous Drain Current Power MOSFET Transistor , 900 uOhms Drain-Source Resistance Power MOSFET Transistor

ISC009N06NM6 Integrated Circuit Chip OptiMOS™ 6 N-Channel Power MOSFET Transistor

ISC009N06NM6 Integrated Circuit Chip OptiMOS™ 6 N-Channel Power MOSFET Transistor

Product Description

ISC009N06NM6 is a 60V OptiMOS™ 6 N-Channel Power MOSFET Transistor. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on).

Specifications

Series	OptiMOS™ 6 Power-Transistor
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	40A (Ta), 344A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Rds On (Max) @ Id, Vgs	0.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	3.3V @ 118µA
Gate Charge (Qg) (Max) @ Vgs	121 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8300 pF @ 30 V
Power Dissipation (Max)	3W (Ta), 221W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-WSON-8-2
Package / Case	8-PowerWDFN

Key Features

High performance silicon technology
Soft-switching optimized
Normal level gate drive
175°C rated
Industrial qualification
Dual-side cooled package with lowest Junction-top thermal resistance
Optimized for high performance SMPS
Optimized for low voltage drives and battery powered applications
N-channel, normal level
Very low on-resistance RDS(on)
Superior thermal resistance
100% avalanche tested

Applications

General purpose motor drive
Telecommunications infrastructure
Battery management systems (BMS)
Server power supply units (PSU)
DC-DC power conversion

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Frequently Asked Questions

Q. Are your products original?

A: Yes, all products are original, new original import is our purpose.

Q: Which Certificates do you have?

A: We are ISO 9001:2015 Certified Company and member of ERAI.

Q: Can you support small quantity order or sample? Is the sample free?

A: Yes, we support sample order and small order. Sample cost is different according to your order or project.

Q: How to ship my order? Is it safe?

A: We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.

Q: What about the lead time?

A: We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Tag:

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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ISC009N06NM6 OptiMOS™ 6 N-Channel Power MOSFET Transistor with 60V Drain-Source Voltage, 344A Continuous Drain Current, and 900 uOhms Drain-Source Resistance

ISC009N06NM6 OptiMOS™ 6 N-Channel Power MOSFET Transistor with 60V Drain-Source Voltage, 344A Continuous Drain Current, and 900 uOhms Drain-Source Resistance

ISC009N06NM6 OptiMOS™ 6 N-Channel Power MOSFET Transistor with 60V Drain-Source Voltage, 344A Continuous Drain Current, and 900 uOhms Drain-Source Resistance

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