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IQE031N08LM6CGSC Integrated Circuit Chip N-Channel 80V OptiMOS™ 6 Power MOSFET with 125W Power Dissipation

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IQE031N08LM6CGSC Integrated Circuit Chip N-Channel 80V OptiMOS™ 6 Power MOSFET with 125W Power Dissipation

IQE031N08LM6CGSC Integrated Circuit Chip N-Channel 80V OptiMOS™ 6 Power MOSFET with 125W Power Dissipation
IQE031N08LM6CGSC Integrated Circuit Chip N-Channel 80V OptiMOS™ 6 Power MOSFET with 125W Power Dissipation

Large Image :  IQE031N08LM6CGSC Integrated Circuit Chip N-Channel 80V OptiMOS™ 6 Power MOSFET with 125W Power Dissipation

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: IQE031N08LM6CGSC
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: PG-WHTFN-9
Delivery Time: 5-8 work days
Payment Terms: T/T,L/C,Western Union
Contact Now

IQE031N08LM6CGSC Integrated Circuit Chip N-Channel 80V OptiMOS™ 6 Power MOSFET with 125W Power Dissipation

Description
Part Number: IQE031N08LM6CGSC Drain To Source Voltage (Vdss): 80 V
Minimum Operating Temperature:: - 55 C Maximum Operating Temperature:: + 175 C
Pd - Power Dissipation:: 125 W Forward Transconductance - Min:: 55 S
Highlight:

80V Power MOSFET

,

125W Power Dissipation Integrated Circuit Chip

,

N-Channel OptiMOS™ 6

IQE031N08LM6CGSC Integrated Circuit Chip N-Channel 80V OptiMOS™ 6 Power MOSFET Transistors
Product Overview
IQE031N08LM6CGSC is Infineon's new best-in-class OptiMOS™ 6 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate (CG) dual-side cooling (DSC) package, offering the industry's lowest on-state resistance RDS(on) at 25˚C, superior thermal performance, and optimized parallelization.
Technical Specifications
Parameter Value
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 127A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.3V @ 50.8µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4600 pF @ 40 V
Power Dissipation (Max) 2.5W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Key Features
  • Logic level allows lower Qrr and QOSS
  • Center Gate optimized for paralleling
  • Up to 35% lower RDS(on) vs previous Gen
  • New, optimized layout possibilities
Performance Benefits
  • Enables highest power density & performance
  • Superior thermal performance
  • Efficient layout for space use
  • Simplified MOSFET parallelization
  • Improved PCB losses
Applications
  • 48 V intermediate bus converter (IBC)
  • Telecommunications infrastructure
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Frequently Asked Questions
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample? Is the sample free?
A: Yes, we support sample order and small order. Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Tag:

Integrated Circuit Chip 24-PQFN,

TUSB1002ARGER Dual Channel Linear,

Integrated Chips QFN24

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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