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IQE031N08LM6CG Integrated Circuit Chip N-Channel 80V 127A OptiMOS™ 6 Power MOSFET Transistors

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IQE031N08LM6CG Integrated Circuit Chip N-Channel 80V 127A OptiMOS™ 6 Power MOSFET Transistors

IQE031N08LM6CG Integrated Circuit Chip N-Channel 80V 127A OptiMOS™ 6 Power MOSFET Transistors
IQE031N08LM6CG Integrated Circuit Chip N-Channel 80V 127A OptiMOS™ 6 Power MOSFET Transistors

Large Image :  IQE031N08LM6CG Integrated Circuit Chip N-Channel 80V 127A OptiMOS™ 6 Power MOSFET Transistors

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: IQE031N08LM6CG
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: PG-WHTFN-9
Delivery Time: 5-8 work days
Payment Terms: T/T,L/C,Western Union
Contact Now

IQE031N08LM6CG Integrated Circuit Chip N-Channel 80V 127A OptiMOS™ 6 Power MOSFET Transistors

Description
Part Number: IQE031N08LM6CG Drain To Source Voltage (Vdss): 80 V
Minimum Operating Temperature:: - 55 C Maximum Operating Temperature:: + 175 C
Pd - Power Dissipation:: 125 W Forward Transconductance - Min:: 55 S
Highlight:

80V Drain-Source Voltage Power MOSFET

,

127A Continuous Drain Current Transistor

,

3.15 mOhms Drain-Source Resistance Integrated Circuit Chip

IQE031N08LM6CG Integrated Circuit Chip N-Channel 80V 127A OptiMOS™ 6 Power MOSFET Transistors
IQE031N08LM6CG is a best-in-class OptiMOS™ 6 power MOSFET featuring 80V logic level in PQFN 3.3x3.3 Source-Down Center-Gate (CG) package. This component delivers the industry's lowest on-state resistance RDS(on) at 25˚C, superior thermal performance, and optimized parallelization capabilities.
Technical Specifications
Parameter Value
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 80 V
Id - Continuous Drain Current 127 A
Rds On - Drain-Source Resistance 3.15 mOhms
Vgs - Gate-Source Voltage 20 V
Vgs th - Gate-Source Threshold Voltage 2.3 V
Qg - Gate Charge 26 nC
Minimum Operating Temperature -55°C
Maximum Operating Temperature +175°C
Pd - Power Dissipation 125 W
Key Features
  • Logic level allows lower Qrr and QOSS
  • Center Gate optimized for paralleling
  • Up to 35% lower RDS(on) vs previous generation
  • New, optimized layout possibilities
Performance Benefits
  • Enables highest power density & performance
  • Superior thermal performance
  • Efficient layout for space utilization
  • Simplified MOSFET parallelization
  • Improved PCB losses
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Frequently Asked Questions
Are your products original?
Yes, all products are original, new original import is our purpose.
Which Certificates do you have?
We are ISO 9001:2015 Certified Company and member of ERAI.
Can you support small quantity order or sample? Is the sample free?
Yes, we support sample order and small order. Sample cost is different according to your order or project.
How to ship my order? Is it safe?
We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
What about the lead time?
We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Tag:

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Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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