IPDQ60R055CM8 600V 45A N-Channel Power MOSFET Transistor with Reduced Gate Charge CoolMOS™ 8 Integrated Circuit Chip

Name: IPDQ60R055CM8 600V 45A N-Channel Power MOSFET Transistor with Reduced Gate Charge CoolMOS™ 8 Integrated Circuit Chip
Brand: ShenZhen Mingjiada Electronics Co.,Ltd.
SKU: IPDQ60R055CM8
Availability: InStock

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IPDQ60R055CM8 600V 45A N-Channel Power MOSFET Transistor with Reduced Gate Charge CoolMOS™ 8 Integrated Circuit Chip

Large Image : IPDQ60R055CM8 600V 45A N-Channel Power MOSFET Transistor with Reduced Gate Charge CoolMOS™ 8 Integrated Circuit Chip

Product Details:

Place of Origin:	CN
Brand Name:	Original Factory
Certification:	Lead free / RoHS Compliant
Model Number:	IPDQ60R055CM8

Payment & Shipping Terms:

Minimum Order Quantity:	10
Price:	Contact for Sample
Packaging Details:	Q-DPAK-22
Delivery Time:	5-8 work days
Payment Terms:	T/T,L/C,Western Union

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IPDQ60R055CM8 600V 45A N-Channel Power MOSFET Transistor with Reduced Gate Charge CoolMOS™ 8 Integrated Circuit Chip

Description

Part Number:	IPDQ60R055CM8	ID (@ TC=25°C) Max:	45 A
ID (@25°C) Max:	45 A	IDpuls (@25°C) Max:	148 A
RDS (on) (@ Tj = 25°C):	45.83315 MΩ	Ptot (@25°C) Max:	236 W
Highlight:	600V Power MOSFET Transistor , 45A Integrated Circuit Chip , Reduced Gate Charge CoolMOS™ 8

IPDQ60R055CM8 Integrated Circuit Chip N-Channel 600V CoolMOS™ 8 Power MOSFET Transistors

Product Overview

IPDQ60R055CM8 is an N-Channel 600V CoolMOS™ 8 Power MOSFET Transistor featuring significant performance improvements over previous generations. This advanced power semiconductor delivers reduced gate charge (Qg) by 20% over CFD7, improved turn-off losses (Eoss) reduction by 12% over CFD7, lower reverse recovery charge (Qrr) by 3% compared to CFD7, and features the lowest reverse recovery time (trr) available in the market.

Technical Specifications

Parameter	Value
ID (@ TC=25°C) max	45 A
ID (@25°C) max	45 A
IDpuls (@25°C) max	148 A
Mounting	SMT
Operating Temperature (Tj)	-55 °C to 150 °C
Package	Q-DPAK
Polarity	N
Ptot (@25°C) max	236 W
QG (typ @10V)	51 nC
RDS (on) (@ Tj = 25°C)	45.83315 mΩ
VDS max	600 V
VGS(th)	4.2 V

Key Features

Significant reduction of losses
Excellent commutation ruggedness
Integrated fast body diode
XT interconnection technology
ESD protection
Top-side cooling QDPAK package
12000 cycle TCoB reliability

Application Benefits

Increased power density
Ease of use and fast design-in
Low ringing tendency
Simplified thermal management
Simplified portfolio selection
SMT compatible manufacturing
Reduced assembly cost
Reduced stray inductance
Space reduction in PCB design

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Frequently Asked Questions

Are your products original?

Yes, all products are original, new original import is our purpose.

Which Certificates do you have?

We are ISO 9001:2015 Certified Company and member of ERAI.

Can you support small quantity order or sample? Is the sample free?

Yes, we support sample order and small order. Sample cost is different according to your order or project.

How to ship my order? Is it safe?

We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.

What about the lead time?

We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Tag:

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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IPDQ60R055CM8 600V 45A N-Channel Power MOSFET Transistor with Reduced Gate Charge CoolMOS™ 8 Integrated Circuit Chip

IPDQ60R055CM8 600V 45A N-Channel Power MOSFET Transistor with Reduced Gate Charge CoolMOS™ 8 Integrated Circuit Chip

IPDQ60R055CM8 600V 45A N-Channel Power MOSFET Transistor with Reduced Gate Charge CoolMOS™ 8 Integrated Circuit Chip

600V Power MOSFET Transistor

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