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ISC025N06LM6 Integrated Circuit Chip OptiMOS™ 6 Power Transistor 60V 143A 2.5 mOhms N-Channel MOSFET

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china ShenZhen Mingjiada Electronics Co.,Ltd. certification
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ISC025N06LM6 Integrated Circuit Chip OptiMOS™ 6 Power Transistor 60V 143A 2.5 mOhms N-Channel MOSFET

ISC025N06LM6 Integrated Circuit Chip OptiMOS™ 6 Power Transistor 60V 143A 2.5 mOhms N-Channel MOSFET
ISC025N06LM6 Integrated Circuit Chip OptiMOS™ 6 Power Transistor 60V 143A 2.5 mOhms N-Channel MOSFET

Large Image :  ISC025N06LM6 Integrated Circuit Chip OptiMOS™ 6 Power Transistor 60V 143A 2.5 mOhms N-Channel MOSFET

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: ISC025N06LM6
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: PG-TDSON-8
Delivery Time: 5-8 work days
Payment Terms: T/T,L/C,Western Union

ISC025N06LM6 Integrated Circuit Chip OptiMOS™ 6 Power Transistor 60V 143A 2.5 mOhms N-Channel MOSFET

Description
Part Number: ISC025N06LM6 Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 143 A Rds On - Drain-Source Resistance: 2.5 MOhms
Qg - Gate Charge: 22 NC Pd - Power Dissipation: 100 W
Highlight:

60V Integrated Circuit Chip

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143A Power Transistor

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2.5 mOhms MOSFET

ISC025N06LM6 Integrated Circuit Chip OptiMOS™ 6 Power Transistor
ISC025N06LM6 is a 60V, OptiMOS™ 6 N-Channel Power MOSFET Transistor in a PG-TDSON-8 package. It features low on-resistance, low gate charge and excellent thermal performance, making it suitable for high-frequency, high-efficiency switching applications.
Technical Specifications
Parameter Value
Technology Si
Mounting Style SMD/SMT
Package / Case PG-TDSON-8
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 143 A
Rds On - Drain-Source Resistance 2.5 mOhms
Vgs - Gate-Source Voltage 20 V
Vgs th - Gate-Source Threshold Voltage 2.3 V
Qg - Gate Charge 22 nC
Operating Temperature Range -55 ℃ to +175 ℃
Pd - Power Dissipation 100 W
Channel Mode Enhancement
Fall Time 2.9 ns
Forward Transconductance - Min 55 S
Product Type MOSFETs
Rise Time 1.4 ns
Subcategory Transistors
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 22.5 ns
Typical Turn-On Delay Time 7 ns
Key Features
  • High performance silicon technology
  • Soft-switching optimized
  • Normal level gate drive
  • 175°C rated
  • Industrial qualification
  • Optimized for high performance SMPS
  • Optimized for Synchronous rectification
  • N‑channel, logic level
  • Very low on‑resistance RDS(on)
  • Superior thermal resistance
  • 100% avalanche tested
Applications
  • General purpose motor drive
  • Telecommunications infrastructure
  • Server power supply units (PSU)
  • DC-DC power conversion
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Frequently Asked Questions
Are your products original?
Yes, all products are original, new original import is our purpose.
Which Certificates do you have?
We are ISO 9001:2015 Certified Company and member of ERAI.
Can you support small quantity order or sample? Is the sample free?
Yes, we support sample order and small order. Sample cost is different according to your order or project.
How to ship my order? Is it safe?
We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
What about the lead time?
We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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