ISC008N06LM6 Integrated Circuit Chip 60V 378A OptiMOS™ 6 Power Transistor with 800 uOhms Drain-Source Resistance

Name: ISC008N06LM6 Integrated Circuit Chip 60V 378A OptiMOS™ 6 Power Transistor with 800 uOhms Drain-Source Resistance
Brand: ShenZhen Mingjiada Electronics Co.,Ltd.
SKU: ISC008N06LM6
Availability: InStock

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ISC008N06LM6 Integrated Circuit Chip 60V 378A OptiMOS™ 6 Power Transistor with 800 uOhms Drain-Source Resistance

Large Image : ISC008N06LM6 Integrated Circuit Chip 60V 378A OptiMOS™ 6 Power Transistor with 800 uOhms Drain-Source Resistance

Product Details:

Place of Origin:	CN
Brand Name:	Original Factory
Certification:	Lead free / RoHS Compliant
Model Number:	ISC008N06LM6

Payment & Shipping Terms:

Minimum Order Quantity:	10
Price:	Contact for Sample
Packaging Details:	PG-TDSON-8
Delivery Time:	5-8 work days
Payment Terms:	T/T,L/C,Western Union

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ISC008N06LM6 Integrated Circuit Chip 60V 378A OptiMOS™ 6 Power Transistor with 800 uOhms Drain-Source Resistance

Description

Part Number:	ISC008N06LM6	Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	378 A	Rds On - Drain-Source Resistance:	800 UOhms
Qg - Gate Charge:	68 NC	Pd - Power Dissipation:	221 W
Highlight:	60V Integrated Circuit Chip , 378A Power Transistor , 800 uOhms OptiMOS™ 6

ISC008N06LM6 Integrated Circuit Chip

60V 378A OptiMOS™ 6 Power Transistors in PG-TDSON-8 Package

Product Overview

The ISC008N06LM6 is a 60V, 378A OptiMOS™ 6 Power Transistor in PG-TDSON-8 package. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on).

Technical Specifications

Mounting Style	SMD/SMT
Package / Case	PG-TDSON-8
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	378 A
Rds On - Drain-Source Resistance	800 uOhms
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	2.3 V
Qg - Gate Charge	68 nC
Operating Temperature Range	-55 ℃ to +175 ℃
Pd - Power Dissipation	221 W
Channel Mode	Enhancement

Key Features

Optimized for high performance SMPS
Optimized for synchronous rectification
N-channel, logic level
Very low on-resistance RDS(on)
Superior thermal resistance
100% avalanche tested
High performance silicon technology
Soft-switching optimized
Normal level gate drive
175°C rated
Industrial qualification

Applications

DC-DC Converters and Synchronous Rectification Circuits for High-Frequency Servers / Communication Power Supplies
High-Current Motor Drives for Industrial Automation and Robotics
High-Current Protection and Balancing Circuits for Battery Management Systems (BMS)
High-Power Modules for Power Distribution and LED Drivers in Automotive Electronics

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Frequently Asked Questions

Are your products original?

Yes, all products are original, new original import is our purpose.

Which Certificates do you have?

We are ISO 9001:2015 Certified Company and member of ERAI.

Can you support small quantity order or sample? Is the sample free?

Yes, we support sample order and small order. Sample cost is different according to your order or project.

How to ship my order? Is it safe?

We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.

What about the lead time?

We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Tag:

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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ISC008N06LM6 Integrated Circuit Chip 60V 378A OptiMOS™ 6 Power Transistor with 800 uOhms Drain-Source Resistance

ISC008N06LM6 Integrated Circuit Chip 60V 378A OptiMOS™ 6 Power Transistor with 800 uOhms Drain-Source Resistance

ISC008N06LM6 Integrated Circuit Chip 60V 378A OptiMOS™ 6 Power Transistor with 800 uOhms Drain-Source Resistance

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