ISC014N08NM6 OptiMOS™ 6 N-Channel Power MOSFET Transistor with 80V Drain to Source Voltage, 279A Continuous Drain Current, and High Frequency Switching

Name: ISC014N08NM6 OptiMOS™ 6 N-Channel Power MOSFET Transistor with 80V Drain to Source Voltage, 279A Continuous Drain Current, and High Frequency Switching
Brand: ShenZhen Mingjiada Electronics Co.,Ltd.
SKU: ISC014N08NM6
Availability: InStock

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ISC014N08NM6 OptiMOS™ 6 N-Channel Power MOSFET Transistor with 80V Drain to Source Voltage, 279A Continuous Drain Current, and High Frequency Switching

Large Image : ISC014N08NM6 OptiMOS™ 6 N-Channel Power MOSFET Transistor with 80V Drain to Source Voltage, 279A Continuous Drain Current, and High Frequency Switching

Product Details:

Place of Origin:	CN
Brand Name:	Original Factory
Certification:	Lead free / RoHS Compliant
Model Number:	ISC014N08NM6

Payment & Shipping Terms:

Minimum Order Quantity:	10
Price:	Contact for Sample
Packaging Details:	PG-TSON-8
Delivery Time:	5-8 work days
Payment Terms:	T/T,L/C,Western Union

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ISC014N08NM6 OptiMOS™ 6 N-Channel Power MOSFET Transistor with 80V Drain to Source Voltage, 279A Continuous Drain Current, and High Frequency Switching

Description

Part Number:	ISC014N08NM6	Series:	OptiMOS™ 6
Drain To Source Voltage (Vdss):	80 V	Current - Continuous Drain (Id) @ 25°C:	30A (Ta), 279A (Tc)
Gate Charge (Qg) (Max) @ Vgs:	95 NC @ 10 V	Input Capacitance (Ciss) (Max) @ Vds:	6800 PF @ 40 V
Highlight:	80V Drain to Source Voltage Power MOSFET , 279A Continuous Drain Current N-Channel MOSFET , High Frequency Switching OptiMOS™ 6 Transistor

ISC014N08NM6 Integrated Circuit Chip OptiMOS™ 6 N-Channel Power MOSFET Transistor

The ISC014N08NM6 is an OptiMOS™ 6 N-Channel Power MOSFET Transistor in PG-TSON-8 package. This component is ideal for high switching frequency applications including telecom, server, and solar systems. Thanks to the performance improvements of OptiMOS™ 6 80V technology, it can also be used in battery-powered applications and battery management systems (BMS).

Technical Specifications

Parameter	Value
Series	OptiMOS™ 6
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	30A (Ta), 279A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Rds On (Max) @ Id, Vgs	1.45mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	3.5V @ 144µA
Gate Charge (Qg) (Max) @ Vgs	95 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6800 pF @ 40 V
Power Dissipation (Max)	3W (Ta), 254W (Tc)
Operating Temperature	-55°C ~ 175°C
Mounting Type	Surface Mount
Supplier Device Package	PG-TSON-8-5
Package / Case	8-PowerTDFN

Key Features

N-channel, normal level operation
Very low on-resistance RDS(on)
Excellent gate charge x RDS(on) product (FOM)
Very low reverse recovery charge (Qrr)
Ideal for high frequency switching and synchronous rectification
175°C operating temperature capability
High avalanche energy rating

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Frequently Asked Questions

Are your products original?

Yes, all products are original, new original import is our purpose.

Which Certificates do you have?

We are ISO 9001:2015 Certified Company and member of ERAI.

Can you support small quantity order or sample? Is the sample free?

Yes, we support sample orders and small orders. Sample cost varies according to your order or project requirements.

How to ship my order? Is it safe?

We use express carriers such as DHL, FedEx, UPS, TNT, and EMS. We can also use your suggested forwarder. Products are securely packaged to ensure safety, and we are responsible for any damage to your order.

What about the lead time?

We can ship stock parts within 5 working days. For items not in stock, we will confirm the lead time based on your order quantity.

Tag:

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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ISC014N08NM6 OptiMOS™ 6 N-Channel Power MOSFET Transistor with 80V Drain to Source Voltage, 279A Continuous Drain Current, and High Frequency Switching

ISC014N08NM6 OptiMOS™ 6 N-Channel Power MOSFET Transistor with 80V Drain to Source Voltage, 279A Continuous Drain Current, and High Frequency Switching

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