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ISC019N08NM7 Integrated Circuit Chip 80V 209A 1.9mOhm OptiMOS™ 7 N-Channel Power MOSFET Transistor

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china ShenZhen Mingjiada Electronics Co.,Ltd. certification
china ShenZhen Mingjiada Electronics Co.,Ltd. certification
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ISC019N08NM7 Integrated Circuit Chip 80V 209A 1.9mOhm OptiMOS™ 7 N-Channel Power MOSFET Transistor

ISC019N08NM7 Integrated Circuit Chip 80V 209A 1.9mOhm OptiMOS™ 7 N-Channel Power MOSFET Transistor
ISC019N08NM7 Integrated Circuit Chip 80V 209A 1.9mOhm OptiMOS™ 7 N-Channel Power MOSFET Transistor

Large Image :  ISC019N08NM7 Integrated Circuit Chip 80V 209A 1.9mOhm OptiMOS™ 7 N-Channel Power MOSFET Transistor

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: ISC019N08NM7
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: PG-TDSON-8
Delivery Time: 5-8 work days
Payment Terms: T/T,L/C,Western Union

ISC019N08NM7 Integrated Circuit Chip 80V 209A 1.9mOhm OptiMOS™ 7 N-Channel Power MOSFET Transistor

Description
Part Number: ISC019N08NM7 Transistor Polarity:: N-Channel
Number Of Channels:: 1 Channel Vds - Drain-Source Breakdown Voltage:: 80 V
Id - Continuous Drain Current:: 209 A Rds On - Drain-Source Resistance:: 1.9 MOhms
Highlight:

80V Power MOSFET

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209A Integrated Circuit Chip

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1.9mOhm OptiMOS™ 7

ISC019N08NM7 Integrated Circuit Chip 80V 26A OptiMOS™ 7 N-Channel Power MOSFET Transistors
ISC019N08NM7 OptiMOS™ 7 80 V represents the latest technology, setting a new industry standard for optimal balance between power efficiency, performance, and cost effectiveness.
Product Specifications
Parameter Value
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 26A (Ta), 209A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.2V @ 87µA
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5633 pF @ 40 V
Power Dissipation (Max) 3W (Ta), 188W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Key Features
  • High performance silicon technology
  • Normal level gate drive
  • 175°C rated temperature capability
  • Industrial qualification standards
Performance Benefits
>32% improved FOMs compared to OptiMOS™ 5
Enhanced switching performance over OptiMOS™ 5
Easy integration and implementation
Soft body diode characteristics
Robust and reliable operational performance
Target Applications
Data center and AI data center solutions Telecommunications infrastructure Photovoltaic systems Industrial and consumer BMS Server power supply units (PSU)
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Frequently Asked Questions
Are your products original?
Yes, all products are original. New original import is our primary business focus.
Which Certificates do you have?
We are ISO 9001:2015 Certified Company and member of ERAI.
Can you support small quantity order or sample? Is the sample free?
Yes, we support sample orders and small quantity purchases. Sample cost varies according to your order requirements or project specifications.
How to ship my order? Is it safe?
We use express carriers including DHL, FedEx, UPS, TNT, and EMS. We can also use your preferred forwarder. Products are professionally packaged to ensure safety, and we assume responsibility for any product damage during shipping.
What about the lead time?
We can ship stock parts within 5 working days. For items not in stock, we will confirm lead time based on your order quantity requirements.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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