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ISC024N08NM7 Integrated Circuit Chip OptiMOS™ 7 Power MOSFET with 2.4mΩ Drain-Source Resistance 80V Breakdown Voltage and 167A Drain Current

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ISC024N08NM7 Integrated Circuit Chip OptiMOS™ 7 Power MOSFET with 2.4mΩ Drain-Source Resistance 80V Breakdown Voltage and 167A Drain Current

ISC024N08NM7 Integrated Circuit Chip OptiMOS™ 7 Power MOSFET with 2.4mΩ Drain-Source Resistance 80V Breakdown Voltage and 167A Drain Current
ISC024N08NM7 Integrated Circuit Chip OptiMOS™ 7 Power MOSFET with 2.4mΩ Drain-Source Resistance 80V Breakdown Voltage and 167A Drain Current

Large Image :  ISC024N08NM7 Integrated Circuit Chip OptiMOS™ 7 Power MOSFET with 2.4mΩ Drain-Source Resistance 80V Breakdown Voltage and 167A Drain Current

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: ISC024N08NM7
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: PG-TDSON-8
Delivery Time: 5-8 work days
Payment Terms: T/T,L/C,Western Union
Contact Now

ISC024N08NM7 Integrated Circuit Chip OptiMOS™ 7 Power MOSFET with 2.4mΩ Drain-Source Resistance 80V Breakdown Voltage and 167A Drain Current

Description
Part Number: ISC024N08NM7 Transistor Polarity:: N-Channel
Number Of Channels:: 1 Channel Vds - Drain-Source Breakdown Voltage:: 80 V
Id - Continuous Drain Current:: 167 A Rds On - Drain-Source Resistance:: 2.4 MOhms
Highlight:

2.4mΩ Drain-Source Resistance Power MOSFET

,

80V Drain-Source Breakdown Voltage Integrated Circuit Chip

,

167A Continuous Drain Current OptiMOS™ 7

ISC024N08NM7 Integrated Circuit Chip 2.4mΩ OptiMOS™ 7 N-Channel Power MOSFET Transistors
ISC024N08NM7 OptiMOS™ 7 80 V is the latest technology setting a new industry standard for a perfect balance of power efficiency and performance with cost efficiency.
Technical Specifications
Parameter Value
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 24A (Ta), 167A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4600 pF @ 40 V
Power Dissipation (Max) 3W (Ta), 150W (Tc)
Operating Temperature -55°C ~ 175°C
Key Features
  • High performance silicon technology
  • Normal level gate drive
  • 175°C rated
  • Industrial qualification
Performance Benefits
>32% improved FOMs compared to OptiMOS™ 5
Improved switching performance compared to OptiMOS™ 5
Ease of use
Soft body diode
Robust reliable performance
Applications
  • Renewables
  • Photovoltaic
  • Motor control
  • DC-DC power conversion
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Frequently Asked Questions
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample? Is the sample free?
A: Yes, we support sample order and small order. Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Tag:

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