ISC034N08NM7 OptiMOS™ 7 Power MOSFET N-Channel Transistor with 80V Drain-Source Voltage 122A Continuous Drain Current and 3.4mOhms Drain-Source Resistance

Name: ISC034N08NM7 OptiMOS™ 7 Power MOSFET N-Channel Transistor with 80V Drain-Source Voltage 122A Continuous Drain Current and 3.4mOhms Drain-Source Resistance
Brand: ShenZhen Mingjiada Electronics Co.,Ltd.
SKU: ISC034N08NM7
Availability: InStock

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ISC034N08NM7 OptiMOS™ 7 Power MOSFET N-Channel Transistor with 80V Drain-Source Voltage 122A Continuous Drain Current and 3.4mOhms Drain-Source Resistance

Large Image : ISC034N08NM7 OptiMOS™ 7 Power MOSFET N-Channel Transistor with 80V Drain-Source Voltage 122A Continuous Drain Current and 3.4mOhms Drain-Source Resistance

Product Details:

Place of Origin:	CN
Brand Name:	Original Factory
Certification:	Lead free / RoHS Compliant
Model Number:	ISC034N08NM7

Payment & Shipping Terms:

Minimum Order Quantity:	10
Price:	Contact for Sample
Packaging Details:	PG-TDSON-8
Delivery Time:	5-8 work days
Payment Terms:	T/T,L/C,Western Union

Contact Now

ISC034N08NM7 OptiMOS™ 7 Power MOSFET N-Channel Transistor with 80V Drain-Source Voltage 122A Continuous Drain Current and 3.4mOhms Drain-Source Resistance

Description

Part Number:	ISC034N08NM7	Transistor Polarity::	N-Channel
Number Of Channels::	1 Channel	Vds - Drain-Source Breakdown Voltage::	80 V
Id - Continuous Drain Current::	122 A	Rds On - Drain-Source Resistance::	3.4 MOhms
Highlight:	80V Drain-Source Voltage Power MOSFET , 122A Continuous Drain Current N-Channel Transistor , 3.4mOhms Drain-Source Resistance Integrated Circuit Chip

ISC034N08NM7 Integrated Circuit Chip OptiMOS™ 7 N-Channel Power MOSFET Transistors

ISC034N08NM7 OptiMOS™ 7 80 V is the latest technology setting a new industry standard for a perfect balance of power efficiency and performance with cost efficiency.

Technical Specifications

Parameter	Value
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	7V, 10V
Rds On (Max) @ Id, Vgs	3.4mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs	44 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3100 pF @ 40 V
Power Dissipation (Max)	3W (Ta), 115W (Tc)
Operating Temperature	-55°C ~ 175°C

Key Features

High performance silicon technology
Normal level gate drive
175°C rated
Industrial qualification

Performance Benefits

>32% improved FOMs compared to OptiMOS™ 5
Improved switching performance compared to OptiMOS™ 5
Ease of use
Soft body diode
Robust reliable performance

Applications

Renewables
Photovoltaic
Motor control
DC-DC power conversion

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Frequently Asked Questions

Are your products original?

Yes, all products are original, new original import is our purpose.

Which Certificates do you have?

We are ISO 9001:2015 Certified Company and member of ERAI.

Can you support small quantity order or sample? Is the sample free?

Yes, we support sample order and small order. Sample cost is different according to your order or project.

How to ship my order? Is it safe?

We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.

What about the lead time?

We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Tag:

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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ISC034N08NM7 OptiMOS™ 7 Power MOSFET N-Channel Transistor with 80V Drain-Source Voltage 122A Continuous Drain Current and 3.4mOhms Drain-Source Resistance

ISC034N08NM7 OptiMOS™ 7 Power MOSFET N-Channel Transistor with 80V Drain-Source Voltage 122A Continuous Drain Current and 3.4mOhms Drain-Source Resistance

ISC034N08NM7 OptiMOS™ 7 Power MOSFET N-Channel Transistor with 80V Drain-Source Voltage 122A Continuous Drain Current and 3.4mOhms Drain-Source Resistance

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