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ISC040N10NM7 Integrated Circuit Chip 100V 130A 4mOhms OptiMOS™ 7 N-Channel Power MOSFET Transistor

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ISC040N10NM7 Integrated Circuit Chip 100V 130A 4mOhms OptiMOS™ 7 N-Channel Power MOSFET Transistor

ISC040N10NM7 Integrated Circuit Chip 100V 130A 4mOhms OptiMOS™ 7 N-Channel Power MOSFET Transistor
ISC040N10NM7 Integrated Circuit Chip 100V 130A 4mOhms OptiMOS™ 7 N-Channel Power MOSFET Transistor

Large Image :  ISC040N10NM7 Integrated Circuit Chip 100V 130A 4mOhms OptiMOS™ 7 N-Channel Power MOSFET Transistor

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: ISC040N10NM7
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: PG-TDSON-8
Delivery Time: 5-8 work days
Payment Terms: T/T,L/C,Western Union
Contact Now

ISC040N10NM7 Integrated Circuit Chip 100V 130A 4mOhms OptiMOS™ 7 N-Channel Power MOSFET Transistor

Description
Part Number: ISC040N10NM7 Transistor Polarity:: N-Channel
Number Of Channels:: 1 Channel Vds - Drain-Source Breakdown Voltage:: 100 V
Id - Continuous Drain Current:: 130 A Rds On - Drain-Source Resistance:: 4 MOhms
Highlight:

100V Integrated Circuit Chip

,

130A Power MOSFET

,

4mOhms N-Channel Transistor

ISC040N10NM7 Integrated Circuit Chip - 100V 18A OptiMOS™ 7 N-Channel Power MOSFET Transistors
The ISC040N10NM7 OptiMOS™ 7 100V represents the latest technology in power MOSFET transistors, setting a new industry standard for the perfect balance of power efficiency, performance, and cost efficiency. This advanced component delivers over 32% improved Figure of Merit (FOM) compared to OptiMOS™ 5 in SuperSO8 packaging.
Key Advantages
Enhanced switching performance compared to OptiMOS™ 5
Superior ease of use with softer body diode
Improved power efficiency and thermal management
Robust and reliable industrial performance
Technical Specifications
Parameter Specification
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.2V @ 66µA
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 50 V
Power Dissipation (Max) 3W (Ta), 150W (Tc)
Operating Temperature -55°C ~ 175°C
Product Features
  • High performance silicon technology
  • Normal level gate drive compatibility
  • 175°C maximum operating temperature rating
  • Industrial qualification standards
Primary Applications
  • Photovoltaic systems and solar power conversion
  • Motor control and drive systems
  • DC-DC power conversion circuits
  • Industrial power management systems
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Frequently Asked Questions
Are your products original?
Yes, all products are original. Sourcing new original imported components is our primary business purpose.
Which Certificates do you have?
We are an ISO 9001:2015 Certified Company and an active member of ERAI (Electronic Resellers Association International).
Can you support small quantity orders or samples? Is the sample free?
Yes, we support sample orders and small quantity requirements. Sample costs vary according to your specific order or project requirements.
How do you ship orders? Is it safe?
We use major express carriers including DHL, FedEx, UPS, TNT, and EMS. We can also use your preferred forwarder. All products receive professional packaging to ensure safety, and we assume responsibility for any product damage during shipping.
What is your typical lead time?
We ship stock parts within 5 working days. For non-stock items, we will confirm the lead time based on your specific order quantity.

Tag:

Integrated Circuit Chip 24-PQFN,

TUSB1002ARGER Dual Channel Linear,

Integrated Chips QFN24

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Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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