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ISZ053N08NM6 Power MOSFET with 80V Drain to Source Voltage N-Channel OptiMOS™ 6 Technology

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ISZ053N08NM6 Power MOSFET with 80V Drain to Source Voltage N-Channel OptiMOS™ 6 Technology

ISZ053N08NM6 Power MOSFET with 80V Drain to Source Voltage N-Channel OptiMOS™ 6 Technology
ISZ053N08NM6 Power MOSFET with 80V Drain to Source Voltage N-Channel OptiMOS™ 6 Technology

Large Image :  ISZ053N08NM6 Power MOSFET with 80V Drain to Source Voltage N-Channel OptiMOS™ 6 Technology

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: ISZ053N08NM6
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: PG-TSDSON-8
Delivery Time: 5-8 work days
Payment Terms: T/T,L/C,Western Union
Contact Now

ISZ053N08NM6 Power MOSFET with 80V Drain to Source Voltage N-Channel OptiMOS™ 6 Technology

Description
Part Number: ISZ053N08NM6 FET Type: N-Channel
Technology: MOSFET (Metal Oxide) Drain To Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Highlight:

80V Drain to Source Voltage Power MOSFET

,

N-Channel MOSFET Transistor

,

OptiMOS™ 6 Technology Integrated Circuit Chip

ISZ053N08NM6 Integrated Circuit Chip OptiMOS™ 6 80V N-Channel Power MOSFET Transistors
Product Overview

ISZ053N08NM6 OptiMOS™ 6 80V represents the latest power MOSFET technology, setting new industry benchmark performance with a comprehensive portfolio offering. Compared to OptiMOS™ 5 technology, Infineon's advanced thin wafer technology enables significant performance improvements, including >28% lower RDS(on) and ~40% improved FOMs in PQFN 3.3x3.3 packages.

The performance enhancement facilitates easier thermal design and reduced paralleling requirements, resulting in higher system efficiency, increased power density, and overall system cost reduction. Infineon's OptiMOS™ 6 80V family is ideal for high switching frequency applications including telecom, server, and solar systems, and thanks to the performance improvements, can also be utilized in battery-powered applications and battery management systems (BMS).

Technical Specifications
Parameter Value
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 14.2A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 5.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 36µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 40 V
Power Dissipation (Max) 2.5W (Ta), 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Key Features
  • Benchmark performance
  • RDS(on) options for optimal cost/performance ratio
  • Industry standard packages
  • Normal level gate drive
  • 175°C rated
  • Industrial qualification
Performance Benefits
  • Lower conduction losses than OptiMOS™ 5
  • Lower switching losses than OptiMOS™ 5
  • Wide portfolio for flexible supply chain
  • False turn-on immunity
  • Improved power, SOA & avalanche current
  • Robust reliable performance
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TSB182IDT8-SOIC
TSB182IYDT8-SOIC
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Frequently Asked Questions
Are your products original?
Yes, all products are original. New original import is our purpose.
Which Certificates do you have?
We are ISO 9001:2015 Certified Company and member of ERAI.
Can you support small quantity order or sample? Is the sample free?
Yes, we support sample orders and small orders. Sample cost varies according to your order or project requirements.
How to ship my order? Is it safe?
We use express carriers such as DHL, FedEx, UPS, TNT, and EMS. We can also use your suggested forwarder. Products are carefully packaged to ensure safety, and we are responsible for any product damage to your order.
What about the lead time?
We can ship stock parts within 5 working days. For items not in stock, we will confirm lead time based on your order quantity.

Tag:

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Integrated Chips QFN24

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Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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