IQFH99N06NM5 Power MOSFET Transistor with 60V Drain-Source Voltage 339A Continuous Drain Current and Ultra-low RDS(on) 1.72 mOhms

Name: IQFH99N06NM5 Power MOSFET Transistor with 60V Drain-Source Voltage 339A Continuous Drain Current and Ultra-low RDS(on) 1.72 mOhms
Brand: ShenZhen Mingjiada Electronics Co.,Ltd.
SKU: IQFH99N06NM5
Availability: InStock

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IQFH99N06NM5 Power MOSFET Transistor with 60V Drain-Source Voltage 339A Continuous Drain Current and Ultra-low RDS(on) 1.72 mOhms

Large Image : IQFH99N06NM5 Power MOSFET Transistor with 60V Drain-Source Voltage 339A Continuous Drain Current and Ultra-low RDS(on) 1.72 mOhms

Product Details:

Place of Origin:	CN
Brand Name:	Original Factory
Certification:	Lead free / RoHS Compliant
Model Number:	IQFH99N06NM5

Payment & Shipping Terms:

Minimum Order Quantity:	10
Price:	Contact for Sample
Packaging Details:	TSON-12
Delivery Time:	5-8 work days
Payment Terms:	T/T,L/C,Western Union

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IQFH99N06NM5 Power MOSFET Transistor with 60V Drain-Source Voltage 339A Continuous Drain Current and Ultra-low RDS(on) 1.72 mOhms

Description

Part Number:	IQFH99N06NM5	Vds - Drain-Source Breakdown Voltage::	60 V
Id - Continuous Drain Current::	339 A	Rds On - Drain-Source Resistance::	1.72 MOhms
Vgs - Gate-Source Voltage::	- 20 V, 20 V	Vgs Th - Gate-Source Threshold Voltage::	2.8 V
Highlight:	60V Drain-Source Voltage Power MOSFET , 339A Continuous Drain Current MOSFET Transistor , Ultra-low RDS(on) 1.72 mOhms Integrated Circuit Chip

IQFH99N06NM5 Integrated Circuit Chip OptiMOS™ 5 N-Channel 60V 40A Power MOSFET Transistors

IQFH99N06NM5 Integrated Circuit Chip OptiMOS™ 5 N-Channel 60V 40A Power MOSFET Transistors

Product Description

The IQFH99N06NM5 60V normal-level power MOSFET features our latest innovative, compact clip-based PQFN 8x6 mm² package, enabling very high current and power levels. This component offers ultra-low RDS(on) of 0.68 mΩ combined with outstanding thermal performance, delivering higher system efficiency and power density for various applications including battery-powered systems, battery management, low-voltage drives, and SMPS.

Technical Specifications

Parameter	Value
Package / Case	TSON-12
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	339 A
Rds On - Drain-Source Resistance	1.72 mOhms
Vgs - Gate-Source Voltage	-20 V, 20 V
Vgs th - Gate-Source Threshold Voltage	2.8 V
Qg - Gate Charge	115 nC
Minimum Operating Temperature	-55 °C
Maximum Operating Temperature	+175 °C
Pd - Power Dissipation	214 W
Configuration	Single
Fall Time	48 ns
Forward Transconductance - Min	120 S
Product Type	MOSFETs
Rise Time	78 ns
Typical Turn-Off Delay Time	54 ns
Typical Turn-On Delay Time	15 ns

Key Features

Cutting edge OptiMOS™ silicon technology
High chip/package ratio
Ultra high currents in compact footprint
Ultra-low package parasitics
Optimized lead-frame and Cu-Clip design
Footprint compatibility with PQFN 5x6
Compact layout with less paralleling

Performance Benefits

Minimized conduction losses
High power capability
Superior device performance
Reduced voltage overshoot
Superior thermal performance
Re-use board for multiple power levels
Superior switching performance/EMI

Target Applications

Light electric vehicle solutions
E-bike solutions
Multicopters and drones
Power tools
Robotics
Battery management systems (BMS)

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R7S910025CBA	FBGA-320
R7S910036CBA	FBGA-320
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R7S910016CBA	FBGA-320
R7S910018CBA	FBGA-320
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MCP47CVB02-E/UN	10-MSOP
MCP47CMB22-E/UN	10-MSOP
MCP47CMB12-E/UN	10-MSOP
MCP47CVB21-E/MF	10-DFN
MCP47CVB28-20E/ST	20-TSSOP
MCP48CVB18-20E/ST	20-TSSOP
MCP47CVB11-E/MG	16-QFN
MCP47CVB01-E/MG	16-QFN
MCP47CVB12-E/MG	16-QFN
MCP47CMB21-E/MF	10-DFN
MCP48FEB24-20E/ST	20-TSSOP
MCP48CVB22-E/MG	16-QFN
MCP48CVB02-E/MG	16-QFN
MCP47FEB14-E/MQ	20-VQFN
MCP47CVB24T-20E/ST	20-TSSOP
MCP48CVB08T-E/ML	20-QFN
MCP47CMD22T-E/MF	10-DFN
MCP47CMD01-E/MG	16-QFN
MCP47CVD11-E/MF	10-DFN
MCP48CMD12-E/MF	10-DFN

Frequently Asked Questions

Q. Are your products original?

A: Yes, all products are original, new original import is our purpose.

Q: Which Certificates do you have?

A: We are ISO 9001:2015 Certified Company and member of ERAI.

Q: Can you support small quantity order or sample? Is the sample free?

A: Yes, we support sample order and small order. Sample cost is different according to your order or project.

Q: How to ship my order? Is it safe?

A: We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.

Q: What about the lead time?

A: We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Tag:

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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IQFH99N06NM5 Power MOSFET Transistor with 60V Drain-Source Voltage 339A Continuous Drain Current and Ultra-low RDS(on) 1.72 mOhms

IQFH99N06NM5 Power MOSFET Transistor with 60V Drain-Source Voltage 339A Continuous Drain Current and Ultra-low RDS(on) 1.72 mOhms

IQFH99N06NM5 Power MOSFET Transistor with 60V Drain-Source Voltage 339A Continuous Drain Current and Ultra-low RDS(on) 1.72 mOhms

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