STP240N10F7 Power MOSFET Transistor with 100V Drain-Source Voltage 300W Power Dissipation and Ultra Low On-Resistance

Name: STP240N10F7 Power MOSFET Transistor with 100V Drain-Source Voltage 300W Power Dissipation and Ultra Low On-Resistance
Brand: ShenZhen Mingjiada Electronics Co.,Ltd.
SKU: STP240N10F7
Availability: InStock

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STP240N10F7 Power MOSFET Transistor with 100V Drain-Source Voltage 300W Power Dissipation and Ultra Low On-Resistance

Large Image : STP240N10F7 Power MOSFET Transistor with 100V Drain-Source Voltage 300W Power Dissipation and Ultra Low On-Resistance

Product Details:

Place of Origin:	CN
Brand Name:	Original Factory
Certification:	Lead free / RoHS Compliant
Model Number:	STP240N10F7

Payment & Shipping Terms:

Minimum Order Quantity:	10
Price:	Contact for Sample
Packaging Details:	TO-220-3
Delivery Time:	5-8 work days
Payment Terms:	T/T,L/C,Western Union

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STP240N10F7 Power MOSFET Transistor with 100V Drain-Source Voltage 300W Power Dissipation and Ultra Low On-Resistance

Description

Part Number:	STP240N10F7	FET Type:	N-Channel
Drain To Source Voltage (Vdss):	100 V	Gate Charge (Qg) (Max) @ Vgs:	176 NC @ 10 V
Power Dissipation (Max):	300W (Tc)	Operating Temperature:	-55°C ~ 175°C (TJ)

STP240N10F7 Integrated Circuit Chip 100V STripFET F7 Power MOSFET Transistors TO-220-3

Product Overview

STP240N10F7 N-channel Power MOSFET utilizes the STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Specifications

Parameter	Value
Product Category	MOSFETs
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-220-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	110 A
Rds On - Drain-Source Resistance	3.2 mOhms
Vgs - Gate-Source Voltage	-20 V, 20 V
Vgs th - Gate-Source Threshold Voltage	4.5 V
Qg - Gate Charge	160 nC
Minimum Operating Temperature	-55 ℃
Maximum Operating Temperature	+175 ℃
Pd - Power Dissipation	300 W
Channel Mode	Enhancement
Tradename	STripFET
Fall Time	112 ns
Product Type	MOSFETs
Rise Time	139 ns
Subcategory	Transistors
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	110 ns
Typical Turn-On Delay Time	49 ns

Key Features

Ultra low on-resistance
100% avalanche tested

Applications

High current switching applications

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Frequently Asked Questions

Are your products original?

Yes, all products are original, new original import is our purpose.

Which Certificates do you have?

We are ISO 9001:2015 Certified Company and member of ERAI.

Can you support small quantity order or sample? Is the sample free?

Yes, we support sample order and small order. Sample cost is different according to your order or project.

How to ship my order? Is it safe?

We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.

What about the lead time?

We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Overall Rating

5.0

Based on 50 reviews for this supplier

Rating Snapshot

The following is the distribution of all ratings

5 stars

100%

4 stars

3 stars

2 stars

1 stars

All Reviews

RUBY

Canada Mar 31.2026

Helpful (99)

I received the package today. The goods are as described by the seller.DC:2025+ New and Original. This was a very satisfying shopping experience.

Tag:

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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STP240N10F7 Power MOSFET Transistor with 100V Drain-Source Voltage 300W Power Dissipation and Ultra Low On-Resistance

STP240N10F7 Power MOSFET Transistor with 100V Drain-Source Voltage 300W Power Dissipation and Ultra Low On-Resistance

STP240N10F7 Power MOSFET Transistor with 100V Drain-Source Voltage 300W Power Dissipation and Ultra Low On-Resistance

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