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SCT4013DLLTRDC Integrated Circuit Chip SiC MOSFET 750V 120A N-Channel Silicon-Carbide Power MOSFET

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China ShenZhen Mingjiada Electronics Co.,Ltd. certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
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SCT4013DLLTRDC Integrated Circuit Chip SiC MOSFET 750V 120A N-Channel Silicon-Carbide Power MOSFET

SCT4013DLLTRDC Integrated Circuit Chip SiC MOSFET 750V 120A N-Channel Silicon-Carbide Power MOSFET
SCT4013DLLTRDC Integrated Circuit Chip SiC MOSFET 750V 120A N-Channel Silicon-Carbide Power MOSFET

Large Image :  SCT4013DLLTRDC Integrated Circuit Chip SiC MOSFET 750V 120A N-Channel Silicon-Carbide Power MOSFET

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: SCT4013DLLTRDC
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: TOLL-9
Delivery Time: 5-8 work days
Payment Terms: T/T,L/C,Western Union

SCT4013DLLTRDC Integrated Circuit Chip SiC MOSFET 750V 120A N-Channel Silicon-Carbide Power MOSFET

Description
Part Number: SCT4013DLLTRDC Drain To Source Voltage (Vdss): 750 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V
Gate Charge (Qg) (Max) @ Vgs: 170 NC @ 18 V Power Dissipation (Max): 405W

SCT4013DLLTRDC Integrated Circuit Chip SiC MOSFET 750V 120A N-Channel Silicon-Carbide Power MOSFET

SCT4013DLLTRDC Integrated Circuit Chip SiC MOSFET 750V 120A N-Channel Silicon-Carbide Power MOSFET

SCT4013DLLTRDC is a 750V, 120A, Silicon-carbide (SiC) MOSFET in the TOLL (TO-LeadLess) package. The TOLL package offers excellent heat dissipation and high-current capability in a compact form factor, reducing footprint by approximately 26% compared to conventional TO-263 packages. Furthermore, its low gate resistance reduces switching losses, contributing to lower power consumption in applications. In addition to server power supplies and PV inverters, its low-profile design makes it ideal for the latest slim power supplies.

Specifications
Product Category: SiC MOSFETs
Mounting Style: SMD/SMT
Package / Case: TOLL-9
Transistor Polarity: N Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 750 V
Id - Continuous Drain Current: 120 A
Vgs th - Gate-Source Threshold Voltage: 4.8 V
Qg - Gate Charge: 170 nC
Maximum Operating Temperature: + 175 °C
Pd - Power Dissipation: 405 W
Channel Mode: Enhancement
Configuration: Single
Fall Time: 17 ns
Rise Time: 32 ns
Technology: SiC
Typical Turn-Off Delay Time: 17 ns
Typical Turn-On Delay Time: 82 ns
Key Features
  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating; RoHS compliant
  • MSL1 (Moisture stress level)
Applications
  • Industrial equipment: Solar inverters, power supplies for servers and data centers
  • Consumer equipment: General-purpose power supplies
  • SMPS (Switch mode power supplies)
  • UPS (uninterruptable power supplies)
  • Energy storage and battery formation
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Frequently Asked Questions
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample? Is the sample free?
A: Yes, we support sample order and small order. Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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