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BSC021N08NS5 80V N-Channel OptiMOS™ Power MOSFET Transistor with 226A Continuous Drain Current in SuperSO8 Package

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China ShenZhen Mingjiada Electronics Co.,Ltd. certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
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BSC021N08NS5 80V N-Channel OptiMOS™ Power MOSFET Transistor with 226A Continuous Drain Current in SuperSO8 Package

BSC021N08NS5 80V N-Channel OptiMOS™ Power MOSFET Transistor with 226A Continuous Drain Current in SuperSO8 Package
BSC021N08NS5 80V N-Channel OptiMOS™ Power MOSFET Transistor with 226A Continuous Drain Current in SuperSO8 Package

Large Image :  BSC021N08NS5 80V N-Channel OptiMOS™ Power MOSFET Transistor with 226A Continuous Drain Current in SuperSO8 Package

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: BSC021N08NS5
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: PG-TSON-8-3
Delivery Time: 5-8 work days
Payment Terms: T/T,L/C,Western Union

BSC021N08NS5 80V N-Channel OptiMOS™ Power MOSFET Transistor with 226A Continuous Drain Current in SuperSO8 Package

Description
Part Number: BSC021N08NS5 Drain To Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 226A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Power Dissipation (Max): 214W (Tc) 214W (Tc): ±20V

BSC021N08NS5 Integrated Circuit Chip 80V N-Channel OptiMOS™ Power MOSFET Transistors
BSC021N08NS5 Integrated Circuit Chip 80V N-Channel OptiMOS™ Power MOSFET Transistors
Product Description
BSC021N08NS5 OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.
Technical Specifications
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 80 V
Id - Continuous Drain Current: 100 A
Rds On - Drain-Source Resistance: 2.1 mOhms
Vgs - Gate-Source Voltage: -20 V, 20 V
Vgs th - Gate-Source Threshold Voltage: 2.2 V
Qg - Gate Charge: 117 nC
Minimum Operating Temperature: -55 °C
Maximum Operating Temperature: +175 °C
Pd - Power Dissipation: 214 W
Channel Mode: Enhancement
Configuration: Single
Fall Time: 20 ns
Forward Transconductance - Min: 70 S
Product Type: MOSFETs
Rise Time: 17 ns
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 44 ns
Typical Turn-On Delay Time: 13 ns
Unit Weight: 20 mg
Key Features
  • Optimized for synchronous rectification in server and desktop
  • 100% avalanche tested
  • Superior thermal resistance
  • N-channel
  • 175°C rated
  • Pb-free lead plating; RoHS compliant
  • Halogen-free according to IEC61249-2_21
Applications
  • Medium voltage IBC (48 V)
  • Edge computing
  • Telecommunications infrastructure
  • DIN rail power supply solutions
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Frequently Asked Questions
Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample? Is the sample free?
A: Yes, we support sample order and small order. Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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