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SPA15N60C3 CoolMOS™ Power Transistor with 650V Drain-Source Voltage, 15A Continuous Drain Current, and 280mOhm On-Resistance in TO-220FP-3 Package

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China ShenZhen Mingjiada Electronics Co.,Ltd. certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
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SPA15N60C3 CoolMOS™ Power Transistor with 650V Drain-Source Voltage, 15A Continuous Drain Current, and 280mOhm On-Resistance in TO-220FP-3 Package

SPA15N60C3 CoolMOS™ Power Transistor with 650V Drain-Source Voltage, 15A Continuous Drain Current, and 280mOhm On-Resistance in TO-220FP-3 Package
SPA15N60C3 CoolMOS™ Power Transistor with 650V Drain-Source Voltage, 15A Continuous Drain Current, and 280mOhm On-Resistance in TO-220FP-3 Package

Large Image :  SPA15N60C3 CoolMOS™ Power Transistor with 650V Drain-Source Voltage, 15A Continuous Drain Current, and 280mOhm On-Resistance in TO-220FP-3 Package

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: SPA15N60C3
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: PG-TO220-3
Delivery Time: 5-8 work days
Payment Terms: T/T,L/C,Western Union

SPA15N60C3 CoolMOS™ Power Transistor with 650V Drain-Source Voltage, 15A Continuous Drain Current, and 280mOhm On-Resistance in TO-220FP-3 Package

Description
Part Number: SPA15N60C3 Series: CoolMOS™
Drain To Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280mOhm @ 9.4A, 10V

SPA15N60C3 Integrated Circuit Chip 650V 15A CoolMOS™ N-Channel Power Transistor PG-TO220-3
Product Description

SPA15N60C3 is an N-channel power MOSFET developed using CoolMOS™ C3 super-junction technology. Housed in a classic TO-220 FullPAK (all-plastic) package, this device offers a high voltage rating of 600 V and a low on-resistance of 280 mΩ, with a continuous current rating of 15 A.

Specifications
Product Category: MOSFETs
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220FP-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 15 A
Rds On - Drain-Source Resistance: 280 mOhms
Vgs - Gate-Source Voltage: -20 V, 20 V
Vgs th - Gate-Source Threshold Voltage: 3.9 V
Qg - Gate Charge: 63 nC
Minimum Operating Temperature: -55 ℃
Maximum Operating Temperature: +150 ℃
Pd - Power Dissipation: 34 W
Channel Mode: Enhancement
Fall Time: 5 ns
Product Type: MOSFETs
Rise Time: 5 ns
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 50 ns
Typical Turn-On Delay Time: 10 ns
Key Features
  • New revolutionary high voltage technology
  • Ultra low gate charge
  • Periodic avalanche rated
  • Extreme dv/dt rated
  • Ultra low effective capacitances
  • Improved transconductance
Applications
  • Switched-mode power supplies (SMPS)
  • Industrial control
  • Consumer electronics
  • Lighting and ballasts
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Frequently Asked Questions
Are your products original?
Yes, all products are original, new original import is our purpose.
Which Certificates do you have?
We are ISO 9001:2015 Certified Company and member of ERAI.
Can you support small quantity order or sample? Is the sample free?
Yes, we support sample order and small order. Sample cost is different according to your order or project.
How to ship my order? Is it safe?
We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
What about the lead time?
We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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