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SPB17N80C3 Power MOSFET Transistor with 800V Drain-Source Voltage 17A Continuous Drain Current and CoolMOS™ Technology

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China ShenZhen Mingjiada Electronics Co.,Ltd. certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
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SPB17N80C3 Power MOSFET Transistor with 800V Drain-Source Voltage 17A Continuous Drain Current and CoolMOS™ Technology

SPB17N80C3 Power MOSFET Transistor with 800V Drain-Source Voltage 17A Continuous Drain Current and CoolMOS™ Technology
SPB17N80C3 Power MOSFET Transistor with 800V Drain-Source Voltage 17A Continuous Drain Current and CoolMOS™ Technology

Large Image :  SPB17N80C3 Power MOSFET Transistor with 800V Drain-Source Voltage 17A Continuous Drain Current and CoolMOS™ Technology

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: SPB17N80C3
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: TO-263-3
Delivery Time: 3-5 work days
Payment Terms: T/T
Supply Ability: 10000 Pieces per Day

SPB17N80C3 Power MOSFET Transistor with 800V Drain-Source Voltage 17A Continuous Drain Current and CoolMOS™ Technology

Description
Part Number: SPB17N80C3 Drain To Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V Operating Temperature: -55°C ~ 150°C (TJ)

SPB17N80C3 Integrated Circuit Chip N-Channel 800V 17A CoolMOS™ Power MOSFET Transistors
Product Description

SPB17N80C3 is an N-Channel 800V 17A CoolMOS™ Power MOSFET Transistor in TO-263-3 package.

Specifications
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage800 V
Id - Continuous Drain Current17 A
Rds On - Drain-Source Resistance290 mOhms
Vgs - Gate-Source Voltage-20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.1 V
Qg - Gate Charge88 nC
Minimum Operating Temperature-55 °C
Maximum Operating Temperature+150 °C
Pd - Power Dissipation227 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time12 ns
Product TypeMOSFETs
Rise Time15 ns
Transistor Type1 N-Channel
Typical Turn-Off Delay Time72 ns
Typical Turn-On Delay Time25 ns
Unit Weight4 g
Key Features
  • New revolutionary high voltage technology
  • Extreme dv/dt rated
  • High peak current capability
  • Qualified according to JEDEC for target applications
  • Pb-free lead plating; RoHS compliant
  • Ultra low gate charge
  • Ultra low effective capacitances
Applications
  • Industrial application with high DC bulk voltage
  • Switching Application (i.e. active clamp forward)
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Frequently Asked Questions
Are your products original?
Yes, all products are original, new original import is our purpose.
Which Certificates do you have?
We are ISO 9001:2015 Certified Company and member of ERAI.
Can you support small quantity order or sample? Is the sample free?
Yes, we support sample order and small order. Sample cost is different according to your order or project.
How to ship my order? Is it safe?
We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
What about the lead time?
We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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