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FF2MR12KM1H 1200V 500A CoolSiC™ MOSFET Half Bridge Module with Silicon Carbide Technology

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FF2MR12KM1H 1200V 500A CoolSiC™ MOSFET Half Bridge Module with Silicon Carbide Technology

FF2MR12KM1H 1200V 500A CoolSiC™ MOSFET Half Bridge Module with Silicon Carbide Technology
FF2MR12KM1H 1200V 500A CoolSiC™ MOSFET Half Bridge Module with Silicon Carbide Technology

Large Image :  FF2MR12KM1H 1200V 500A CoolSiC™ MOSFET Half Bridge Module with Silicon Carbide Technology

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: FF2MR12KM1H
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: MODULE
Delivery Time: 5-8 work days
Payment Terms: T/T,L/C,Western Union
Contact Now

FF2MR12KM1H 1200V 500A CoolSiC™ MOSFET Half Bridge Module with Silicon Carbide Technology

Description
Part Number: FF2MR12KM1H Technology: Silicon Carbide (SiC)
Drain To Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V Operating Temperature: -40°C ~ 150°C (TJ)

FF2MR12KM1H Integrated Circuit Chip 1200V CoolSiC™ MOSFET Half Bridge Module
Product Description

The FF2MR12KM1H is a 1200V, 62mm C-Series CoolSiC™ MOSFET half bridge module in the well-known 62mm housing combined with M1H chip technology. Also available with pre-applied Thermal Interface Material.

Specifications
Parameter Value
Series CoolSiC™
Technology Silicon Carbide (SiC)
Configuration 2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 500A (Tc)
Rds On (Max) @ Id, Vgs 2.13mOhm @ 500A, 15V
Vgs(th) (Max) @ Id 5.15V @ 224mA
Gate Charge (Qg) (Max) @ Vgs 1340nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds 39700pF @ 800V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package AG-62MM
Features
  • Electrical features: VDSS = 1200 V, IDN = 420 A / IDRM = 840 A, High current density, Low switching losses
  • Mechanical features: 4 kV AC 1 min insulation
  • High current density
  • Low switching losses
  • Superior gate oxide reliability
  • Highest robustness against humidity
  • Robust integrated body diode
  • High cosmic ray robustness
  • High speed switching module
  • Symmetrical module design
  • Standard construction technique
Applications
  • Solar applications
  • DC/DC converter
  • High-frequency switching application
  • Energy storage systems
  • DC charger for EV
  • Battery energy storage (BESS)
  • EV charging
  • Photovoltaic
  • Uninterruptible power supplies (UPS)
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Frequently Asked Questions
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample? Is the sample free?
A: Yes, we support sample order and small order. Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

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Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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