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RBN75H125S1FP4-A0 1250V 75A IGBT Transistor Integrated Circuit Chip for Power Switching Applications

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China ShenZhen Mingjiada Electronics Co.,Ltd. certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
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RBN75H125S1FP4-A0 1250V 75A IGBT Transistor Integrated Circuit Chip for Power Switching Applications

RBN75H125S1FP4-A0 1250V 75A IGBT Transistor Integrated Circuit Chip for Power Switching Applications
RBN75H125S1FP4-A0 1250V 75A IGBT Transistor Integrated Circuit Chip for Power Switching Applications

Large Image :  RBN75H125S1FP4-A0 1250V 75A IGBT Transistor Integrated Circuit Chip for Power Switching Applications

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: RBN75H125S1FP4-A0
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: TO-247-3
Delivery Time: 3-5 work days
Payment Terms: T/T
Supply Ability: 10000 Pieces per Day

RBN75H125S1FP4-A0 1250V 75A IGBT Transistor Integrated Circuit Chip for Power Switching Applications

Description
Part Number: RBN75H125S1FP4-A0 Package: TO-247-3
Type: IGBT Transistors Continuous Collector Current Ic Max:: 300 A
Pd - Power Dissipation:: 517 W Continuous Collector Current At 25 C:: 150 A

RBN75H125S1FP4-A0 Integrated Circuit Chip 1250V 75A IGBT Transistors For Power Switching Applications

The RBN75H125S1FP4-A0 is a 1250V, 75A trench insulated-gate bipolar transistor (IGBT) that offers low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and is designed for power switching applications. Available in a TO-247A package type.

Specifications
Configuration Single
Collector-Emitter Voltage VCEO Max 1.25 kV
Collector-Emitter Saturation Voltage 1.8 V
Maximum Gate Emitter Voltage -30 V, 30 V
Continuous Collector Current at 25°C 150 A
Pd - Power Dissipation 517 W
Maximum Operating Temperature +175°C
Continuous Collector Current Ic Max 300 A
Features
  • Trench gate and thin wafer technology (G8H series)
  • Built-in fast recovery diode in one package
  • Low collector to emitter saturation voltage VCE(sat) = 1.8V typ. (at IC = 75A, VGE = 15V, Ta = 25°C)
  • Quality grade: Standard
  • High-speed switching
  • Short circuit withstands time (10µs min.)
Applications
  • UPS
  • Welding
  • Photovoltaic inverters
  • Power converter systems
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Frequently Asked Questions
Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample? Is the sample free?
A: Yes, we support sample order and small order. Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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