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IPA60R125CP 650V CoolMOS™ N-Channel Power MOSFET Transistor with 25A Continuous Drain Current

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China ShenZhen Mingjiada Electronics Co.,Ltd. certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
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IPA60R125CP 650V CoolMOS™ N-Channel Power MOSFET Transistor with 25A Continuous Drain Current

IPA60R125CP 650V CoolMOS™ N-Channel Power MOSFET Transistor with 25A Continuous Drain Current
IPA60R125CP 650V CoolMOS™ N-Channel Power MOSFET Transistor with 25A Continuous Drain Current

Large Image :  IPA60R125CP 650V CoolMOS™ N-Channel Power MOSFET Transistor with 25A Continuous Drain Current

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: IPA60R125CP
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: PG-TO220-3
Delivery Time: 5-8 work days
Payment Terms: T/T,L/C,Western Union

IPA60R125CP 650V CoolMOS™ N-Channel Power MOSFET Transistor with 25A Continuous Drain Current

Description
Part Number: IPA60R125CP Drain To Source Voltage (Vdss): 650 V
FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Gate Charge (Qg) (Max) @ Vgs: 70 NC @ 10 V Power Dissipation (Max): 35W (Tc)

IPA60R125CP Integrated Circuit Chip 650V CoolMOS™ N-Channel Power MOSFET Transistors PG-TO220-3
Product Overview

IPA60R125CP is a high-performance N-channel power MOSFET from the CoolMOS™ CP series, designed specifically for power conversion applications requiring high efficiency.

Technical Specifications
Parameter Value
Technology Si
Mounting Style Through Hole
Package / Case TO-220FP-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 25 A
Rds On - Drain-Source Resistance 110 mOhms
Vgs - Gate-Source Voltage -20 V, 20 V
Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 70 nC
Minimum Operating Temperature -55℃
Maximum Operating Temperature +150℃
Pd - Power Dissipation 35 W
Key Features
  • Temperature Compensated Internal Schottky Diode RF Detector
  • Wide Input Power Range: -34dBm to 14dBm
  • Ultra Wide Input Frequency Range: 100kHz to 1000MHz
  • Buffered Output
  • Wide VCC Range of 2.7V to 6V
  • Low Operating Current: 550µA
  • Low Shutdown Current: <2µA
  • Low Profile (1mm) ThinSOT™ Package
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Frequently Asked Questions
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample? Is the sample free?
A: Yes, we support sample order and small order. Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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